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NE6510179A-T1-A [CEL]

NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET; NEC的3W ， L＆ S波段中功率的GaAs HJ- FET

NE6510179A-T1-A


元器件型号：	NE6510179A-T1-A
生产厂家：	CALIFORNIA EASTERN LABS
描述和应用：	NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET NEC的3W ， L＆ S波段中功率的GaAs HJ- FET 晶体晶体管放大器
PDF文件：	总10页 (文件大小：287K)
下载文档：	下载PDF数据表文档文件
型号参数：NE6510179A-T1-A参数

NE6510179A-TI

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET,

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0 NEC

NE6510379A

3 W L-BAND POWER GaAs HJ-FET

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27 NEC

NE6510379A

RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Hetero-junction FET, 79A, 4 PIN

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0 NEC

NE6510379A

RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Hetero-junction FET, 79A, 4 PIN

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0 NEC

NE6510379A-A

RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Hetero-junction FET, 79A, 4 PIN

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0 NEC

NE6510379A-T1

3 W L-BAND POWER GaAs HJ-FET

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31 NEC

NE6510379A-T1

RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Hetero-junction FET, 79A, 4 PIN

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0 NEC

NE6510379A-T1-A

RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Hetero-junction FET, 79A, 4 PIN

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0 NEC

NE651R479A

MEDIUM POWER GaAs HJ-FET

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85 CEL

NE651R479A

0.4 W L-BAND POWER GaAs HJ-FET

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77 NEC

NE651R479A-A

MEDIUM POWER GaAs HJ-FET

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27 CEL

NE651R479A-T1

0.4 W L-BAND POWER GaAs HJ-FET

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39 NEC

NE651R479A-T1-A

MEDIUM POWER GaAs HJ-FET

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32 CEL

NE661M04

NPN SILICON HIGH FREQUENCY TRANSISTOR

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31 CEL

NE661M04

NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD

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78 NEC

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