NE6510179 [CEL]

NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET; NEC的3W , L& S波段中功率的GaAs HJ- FET
NE6510179
元器件型号: NE6510179
生产厂家: CALIFORNIA EASTERN LABS    CALIFORNIA EASTERN LABS
描述和应用:

NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET
NEC的3W , L& S波段中功率的GaAs HJ- FET

PDF文件: 总10页 (文件大小:287K)
下载文档:  下载PDF数据表文档文件
型号参数:NE6510179参数

NE6510179A

NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET

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130 CEL

NE6510179A

RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Hetero-junction FET

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0 NEC

NE6510179A-A

NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET

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60 CEL

NE6510179A-T1

NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET

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46 CEL

NE6510179A-T1-A

NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET

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50 CEL

NE6510179A-TI

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET,

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0 NEC

NE6510379A

3 W L-BAND POWER GaAs HJ-FET

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27 NEC

NE6510379A

RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Hetero-junction FET, 79A, 4 PIN

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0 NEC

NE6510379A

RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Hetero-junction FET, 79A, 4 PIN

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0 NEC

NE6510379A-A

RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Hetero-junction FET, 79A, 4 PIN

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0 NEC

NE6510379A-T1

3 W L-BAND POWER GaAs HJ-FET

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31 NEC

NE6510379A-T1

RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Hetero-junction FET, 79A, 4 PIN

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0 NEC

NE6510379A-T1-A

RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Hetero-junction FET, 79A, 4 PIN

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0 NEC

NE651R479A

MEDIUM POWER GaAs HJ-FET

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85 CEL

NE651R479A

0.4 W L-BAND POWER GaAs HJ-FET

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77 NEC