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元器件品牌
NESG2101M16-T3-A
[CEL]
NPN SiGe HIGH FREQUENCY TRANSISTOR; NPN硅锗高频三极管
元器件型号：
NESG2101M16-T3-A
生产厂家：
CALIFORNIA EASTERN LABS
描述和应用：
NPN SiGe HIGH FREQUENCY TRANSISTOR
NPN硅锗高频三极管
晶体 晶体管 光电二极管 放大器
PDF文件：
总3页 (文件大小：228K)
下载文档：
下载PDF数据表文档文件
型号参数：NESG2101M16-T3-A参数
查看货源
NESG2101M16-T3-A-YFB
RF SMALL SIGNAL TRANSISTOR
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RENESAS
NESG2101M16-T3FB
暂无描述
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NEC
NESG2101M16-T3FB-A
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon Germanium, NPN, LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN
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NEC
NESG2101M16-T3FB-A
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon Germanium, NPN, MINIMOLD, M16, 1208, 6 PIN
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156
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0
NEC
NESG2101M16-T3FB-A
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon Germanium, NPN, LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN
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0
NEC
NESG2101M16-T3YFB-A
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon Germanium, NPN, LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN
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NEC
NESG2101M16-T3YFB-A
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon Germanium, NPN, LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN
Warning
: Undefined variable $rtag in
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156
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0
NEC
NESG210719
NPN SiGe RF Transistor for Low Noise, High-Gain
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6
RENESAS
NESG210719
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
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23
NEC
NESG210719-A
NPN SiGe RF Transistor for Low Noise, High-Gain
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19
RENESAS
NESG210719-A-FB
RF SMALL SIGNAL TRANSISTOR
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156
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0
RENESAS
NESG210719-A-FB
RF SMALL SIGNAL TRANSISTOR
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0
RENESAS
NESG210719-FB
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon Germanium, NPN, 19, SUPER MINIMOLD PACKAGE-3
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0
NEC
NESG210719-FB
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon Germanium, NPN, 19, SUPER MINIMOLD PACKAGE-3
Warning
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156
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0
NEC
NESG210719-FB-A
暂无描述
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0
NEC
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