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NESG250134 [CEL]

NECs NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFIVATION (800mW) 3-PIN OWER MINIMOLD (34 PACKAGE); NEC的NPN硅锗RF晶体管中等输出功率AMPLIFIVATION （ 800mW的） 3 -PIN OWER MINIMOLD （ 34包装）

NESG250134


元器件型号：	NESG250134
生产厂家：	CALIFORNIA EASTERN LABS
描述和应用：	NECs NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFIVATION (800mW) 3-PIN OWER MINIMOLD (34 PACKAGE) NEC的NPN硅锗RF晶体管中等输出功率AMPLIFIVATION （ 800mW的） 3 -PIN OWER MINIMOLD （ 34包装）晶体晶体管输出元件放大器
PDF文件：	总13页 (文件大小：709K)
下载文档：	下载PDF数据表文档文件
型号参数：NESG250134参数

NESG250134-A

RF & Microwave device

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0 RENESAS

NESG250134-AZ

NECs NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFIVATION (800mW) 3-PIN OWER MINIMOLD (34 PACKAGE)

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56 CEL

NESG250134-AZ

NESG250134-AZ

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0 RENESAS

NESG250134-AZ

RF Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, MINIMOLD PACKAGE-3

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0 NEC

NESG250134-AZFB

RF Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, Ultra High Frequency Band, Silicon Germanium, NPN, LEAD FREE, POWER, MINIMOLD, 34, 3 PIN

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0 NEC

NESG250134-AZFB

UHF BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR, LEAD FREE, POWER, MINIMOLD, 34, 3 PIN

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0 RENESAS

NESG250134-AZFB

RF Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, Ultra High Frequency Band, Silicon Germanium, NPN, LEAD FREE, POWER, MINIMOLD, 34, 3 PIN

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0 NEC

NESG250134-AZ-FB

RF Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, Ultra High Frequency Band, Silicon Germanium, NPN, 34, POWER MINIMOLD PACKAGE-3

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0 NEC

NESG250134FB

RF Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, Ultra High Frequency Band, Silicon Germanium, NPN, LEAD FREE, POWER, MINIMOLD, 34, 3 PIN

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0 NEC

NESG250134FB

RF Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, Ultra High Frequency Band, Silicon Germanium, NPN, LEAD FREE, POWER, MINIMOLD, 34, 3 PIN

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0 NEC

NESG250134-FB-A

RF Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, Ultra High Frequency Band, Silicon Germanium, NPN, MINIMOLD PACKAGE-3

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1 NEC

NESG250134-FB-A

RF Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, Ultra High Frequency Band, Silicon Germanium, NPN, MINIMOLD PACKAGE-3

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0 NEC

NESG250134-T1

RF Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, Ultra High Frequency Band, Silicon Germanium, NPN, LEAD FREE, POWER, MINIMOLD, 34, 3 PIN

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0 NEC

NESG250134-T1

RF Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, Ultra High Frequency Band, Silicon Germanium, NPN, LEAD FREE, POWER, MINIMOLD, 34, 3 PIN

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0 NEC

NESG250134-T1-AZ

NECs NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFIVATION (800mW) 3-PIN OWER MINIMOLD (34 PACKAGE)

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87 CEL

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