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NESG270034-T1 [CEL]

NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG); NPN硅锗RF晶体管中等输出功率放大（ 2 W ） 3 - pin电源MINIMOLD （ 34 PKG ）

NESG270034-T1


元器件型号：	NESG270034-T1
生产厂家：	CALIFORNIA EASTERN LABS
描述和应用：	NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG) NPN硅锗RF晶体管中等输出功率放大（ 2 W ） 3 - pin电源MINIMOLD （ 34 PKG ）晶体晶体管输出元件
PDF文件：	总11页 (文件大小：330K)
下载文档：	下载PDF数据表文档文件
型号参数：NESG270034-T1参数

NESG270034-T1-AZ

NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG)

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55 CEL

NESG270034-T1-AZ

暂无描述

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0 RENESAS

NESG270034-T1-AZ-FB

TRANSISTOR RF POWER TRANSISTOR, BIP RF Power

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0 RENESAS

NESG3031M05

NPN SILICON GERMANIUM RF TRANSISTOR

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68 CEL

NESG3031M05

NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

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20 NEC

NESG3031M05

NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

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97 NEC

NESG3031M05-A

RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, C Band, Silicon Germanium, NPN, LEAD FREE, SUPER MINIMOLD, M05, 4 PIN

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1 NEC

NESG3031M05-A-FB

C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR, LEAD FREE, SUPER MINIMOLD, M05, 4 PIN

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0 RENESAS

NESG3031M05-FB

RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, C Band, Silicon Germanium, NPN, SUPER MINIMOLD PACKAGE-4

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0 NEC

NESG3031M05-FB-A

RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, C Band, Silicon Germanium, NPN, SUPER MINIMOLD PACKAGE-4

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0 NEC

NESG3031M05-T1

NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

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55 NEC

NESG3031M05-T1

NPN SILICON GERMANIUM RF TRANSISTOR

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60 CEL

NESG3031M05-T1

NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

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14 NEC

NESG3031M05-T1-A

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG)

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54 CEL

NESG3031M05-T1-A

C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR, LEAD FREE, SUPER MINIMOLD, M05, 4 PIN

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0 RENESAS

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