2N2411LEADFREE [CENTRAL]
暂无描述;型号: | 2N2411LEADFREE |
厂家: | CENTRAL SEMICONDUCTOR CORP |
描述: | 暂无描述 晶体 小信号双极晶体管 开关 |
文件: | 总2页 (文件大小:72K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
2N2411
2N2412
PNP SILICON TRANSISTOR
JEDEC TO-18 CASE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2411, 2N2412 types are PNP Saturated Switching Transistors designed
for high speed switching applications.
MAXIMUM RATINGS:
SYMBOL
UNITS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
V
V
25
15
5.0
100
0.5
1.2
V
V
V
mA
W
W
CBO
CEO
EBO
I
P
P
C
D
D
Power Dissipation
Power Dissipation (T =25°C)
C
Operating and Storage
Junction Temperature
T ,T
-65 to +200
350
°C
J stg
Thermal Resistance
Thermal Resistance
Θ
°C/W
°C/W
JA
JC
Θ
146
ELECTRICAL CHARACTERISTICS:
2N2411
2N2412
SYMBOL
TEST CONDITIONS
MIN MAX
MIN MAX
UNITS
I
I
I
V
V
V
=15V
=15V, T =150°C
=5.0V
10
10
10
10
10
nA
µA
µA
V
V
V
CES
CES
EBO
CBO
CEO
CE(SAT)
BE(SAT)
FE
FE
FE
FE
fe
CE
CE
EB
A
BV
BV
V
V
h
h
h
h
h
C
C
I =10µA
25
15
0.2
25
15
0.2
C
I =10mA
C
I =10mA, I =1.0mA
C
B
B
C
C
C
C
C
E
I =10mA, I =1.0mA
0.7
10
20
0.9
0.7
20
40
0.9
V
C
V
=0.5V, I =50µA
=0.5V, I =10mA
=0.5V, I =10mA, T =-55°C
=1.0V, I =50mA
CE
CE
CE
CE
V
V
V
60
10
120
20
A
10
1.4
20
1.4
V
=10V, I =10mA, f=100MHz
=5.0V, I =0, f=1.0MHz
=0.5V, I =0, f=1.0MHz
CE
CB
EB
V
V
5.0
8.0
5.0
8.0
pF
pF
ob
ib
C
(CONTINUED ON REVERSE SIDE)
R0
2N2411 / 2N2412
PNP SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS (Continued)
2N2411
2N2412
SYMBOL
TEST CONDITIONS
MIN
MAX
MIN MAX UNITS
t
t
t
t
t
t
V
V
V
=1.2V, I =10mA, I =2.5mA, R =300Ω
B1
10
20
25
90
20
10
20
25
90
20
ns
ns
ns
ns
ns
ns
d
r
on
s
f
BE(off)
BE(off)
BE(off)
C
L
=1.2V, I =10mA, I =2.5mA, R =300Ω
C
C
B1
B1
L
L
=1.2V, I =10mA, I =2.5mA, R =300Ω
I =10mA, I =2.5mA, I =2.0mA, R =300Ω
C
C
C
B1
B1
B2
B2
L
L
I =10mA, I =2.5mA, I =2.0mA, R =300Ω
I =10mA, I =2.5mA, I =2.0mA, R =300Ω
B1 B2
100
100
off
L
JEDEC TO-18 CASE - MECHANICAL OUTLINE
A
B
DIMENSIONS
INCHES MILLIMETERS
D
E
SYMBOL MIN
MAX
MIN
5.31
4.52
-
MAX
5.84
4.95
0.76
5.33
-
A (DIA)
0.209 0.230
0.178 0.195
B (DIA)
C
C
-
0.030
D
0.170 0.210
4.32
12.70
0.41
E
0.500
-
F (DIA)
0.016 0.019
0.100
0.48
G (DIA)
2.54
1.27
0.91
0.71
H
I
J
0.050
0.036 0.046
0.028 0.048
F
1.17
1.22
G
H
TO-18 (REV: R1)
LEAD #2
LEAD #1
LEAD #3
I
J
45°
R1
Lead Code:
1) Emitter
2) Base
3) Collector
相关型号:
2N2412LEADFREE
Small Signal Bipolar Transistor, 0.1A I(C), 15V V(BR)CEO, 1-Element, PNP, Silicon, TO-18
CENTRAL
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