2N5822TIN/LEAD#N/A [CENTRAL]
Small Signal Bipolar Transistor,;
| 型号： | 2N5822TIN/LEAD#N/A |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Small Signal Bipolar Transistor, 晶体 小信号双极晶体管 |
| 文件： | 总2页 (文件大小：48K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
2N5820 2N5822 NPN
2N5821 2N5823 PNP
Central
Semiconductor Corp.
COMPLEMENTARY
SILICON TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5820 series
types are epoxy molded complementary silicon
small signal transistors manufactured by the
epitaxial planar process designed for general
purpose amplifier applications where a high
collector current rating is required.
MARKING CODE: FULL PART NUMBER
TO-92-18R CASE
MAXIMUM RATINGS: (T =25°C unless otherwise noted)
A
SYMBOL
UNITS
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
70
70
V
CBO
V
V
CES
V
60
V
CEO
EBO
V
5.0
750
1.0
625
1.5
V
I
mA
A
C
Peak Collector Current
Power Dissipation
I
CM
P
D
mW
W
Power Dissipation (T =25°C)
C
P
D
Operating and Storage
Junction Temperature
T ,T
J
-65 to +150
°C
stg
Thermal Resistance
Thermal Resistance
Θ
°C/W
°C/W
JA
200
Θ
JC
83.3
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
2N5820
2N5821
2N5822
2N5823
SYMBOL
TEST CONDITIONS
MIN
MAX
MIN
MAX
UNITS
I
V
V
V
=25V
100
100
nA
CBO
CB
CB
EB
I
=25V, T =100°C
A
=5.0V
15
10
15
µA
µA
V
CBO
I
10
EBO
BV
I =10µA
70
60
70
60
CES
C
BV
I =10mA
C
V
CEO
BV
I =10µA
5.0
5.0
V
EBO
E
V
I =500mA, I =50mA
0.75
1.2
0.75
1.2
V
CE(SAT)
C
B
V
I =500mA, I =50mA
V
BE(SAT)
C
B
V
V
=2.0V, I =500mA
0.60
60
1.1
0.60
100
25
1.1
V
BE(ON)
CE
CE
CE
C
h
V
V
=2.0V, I =2.0mA
C
120
250
FE
h
=2.0V, I =500mA
20
FE
C
R1 (21-October 2005)
TM
2N5820 2N5822 NPN
2N5821 2N5823 PNP
Central
Semiconductor Corp.
COMPLEMENTARY
SILICON TRANSISTORS
ELECTRICAL CHARACTERISTICS: (Continued)
2N5820
2N5821
2N5822
2N5823
SYMBOL
TEST CONDITIONS
MIN
100
MAX
MIN
120
MAX
UNITS
MHz
f
V
V
V
=2.0V, I =50mA, f=20MHz
T
CE
CB
EB
C
C
=10V, I =0, f=1.0MHz
C
15
55
15
55
pF
pF
ob
C
=0.5V, I =0, f=1.0MHz
ib
E
TO-92-18R CASE - MECHANICAL OUTLINE
DIMENSIONS
INCHES
MILLIMETERS
SYMBOL MIN
MAX
MIN
4.45
4.32
12.70
0.41
MAX
5.21
5.33
-
A (DIA)
B
0.175 0.205
0.170 0.210
C
0.500
-
D
E
0.016 0.022
0.100
0.56
2.54
F
0.050
1.27
G
H
J (DIA)
K
0.125 0.165
0.080 0.105
0.100
3.18
2.03
4.19
2.67
2.54
0.38
0.015
TO-92-18R (REV: R1)
LEAD CODE:
1) COLLECTOR
2) BASE
3) EMITTER
MARKING CODE:
FULL PART NUMBER
R1 (21-October 2005)
相关型号：
2N5823LEADFREE
Small Signal Bipolar Transistor, 0.75A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92-18R, 3 PIN
CENTRAL
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