BCV47 [CENTRAL]
NPN SILICON DARLINGTON TRANSISTOR; NPN硅达林顿晶体管
| 型号： | BCV47 |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | NPN SILICON DARLINGTON TRANSISTOR |
| 文件： | 总2页 (文件大小：103K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
Central
BCV47
Semiconductor Corp.
NPN
SILICON DARLINGTON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BCV47 type is
a Silicon NPN Darlington Transistor manufactured
by the epitaxial planar process, epoxy molded in a
surface mount package, designed for applications
requiring extremely high gain.
Marking Code is FG.
SOT-23 CASE
MAXIMUM RATINGS (T =25°C)
A
SYMBOL
UNITS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Base Current
V
V
V
80
60
10
500
800
100
350
V
V
CBO
CEO
EBO
C
CM
V
mA
mA
mA
mW
I
I
I
P
B
D
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
T ,T
J stg
-65 to +150
357
°C
°C/W
Θ
JA
ELECTRICAL CHARACTERISTICS (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNITS
I
I
V
V
=30V
=10V
100
100
nA
nA
V
V
V
CBO
EBO
CEO
CBO
EBO
CE(SAT)
BE(SAT)
FE
FE
FE
T
CB
BE
BV
BV
BV
V
V
h
h
h
f
I =10mA
60
80
10
C
I =10µA
C
I =100nA
E
I =100mA, I = 0.1mA
1.0
1.5
V
V
C
B
B
C
I =100mA, I = 0.1mA
C
V
=5.0V, I = 1.0mA
=5.0V, I = 10mA
C
=5.0V, I = 100mA
2,000
4,000
10,000
CE
CE
CE
CE
V
V
V
C
C
=5.0V, I = 30mA, f=100MHz
220
MHz
R0 ( 07-December 2001)
TM
BCV47
Central
Semiconductor Corp.
NPN
SILICON DARLINGTON TRANSISTOR
SOT-23 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
MARKING CODE: FG
R0 ( 07-December 2001)
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