BCW89TR [CENTRAL]
Small Signal Bipolar Transistor, 60V V(BR)CEO, 1-Element, PNP, Silicon,;
| 型号： | BCW89TR |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Small Signal Bipolar Transistor, 60V V(BR)CEO, 1-Element, PNP, Silicon, 晶体 晶体管 光电二极管 |
| 文件： | 总2页 (文件大小：323K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCW89
www.centralsemi.com
SURFACE MOUNT
PNP SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BCW89 is a Silicon
PNP Transistor manufactured by the epitaxial planar
process, epoxy molded in a surface mount package,
designed for general purpose applications.
MARKING CODE: H3
SOT-23 CASE
MAXIMUM RATINGS: (T =25°C)
SYMBOL
UNITS
V
A
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
60
60
CEO
V
V
CES
EBO
V
5.0
V
Continuous Collector Current
Power Dissipation
I
500
mA
mW
°C
C
P
350
D
Operating and Storage Junction Temperature
Thermal Resistance
T , T
-65 to +150
357
J
stg
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
MAX
100
10
UNITS
nA
μA
V
I
I
V
V
=20V
CBO
CBO
CB
CB
=20V, T =100°C
A
BV
BV
BV
BV
I =10μA
80
60
60
5.0
CBO
CEO
C
I =2.0mA
V
C
I =10μA
V
CES
C
I =10μA
V
EBO
C
V
V
I =10mA, I =0.5mA
300
750
260
mV
mV
CE(SAT)
BE(ON)
FE
C
B
V
=5.0V, I =2.0mA
600
120
CE
CE
CE
C
h
V
V
=5.0V, I =2.0mA
C
NF
=5.0V, I =200μA, R =2.0kΩ
C S
f=1.0kHz, B=200Hz
10
dB
R1 (20-November 2009)
BCW89
SURFACE MOUNT
PNP SILICON TRANSISTOR
SOT-23 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
MARKING CODE: H3
R1 (20-November 2009)
www.centralsemi.com
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