BCY78-X [CENTRAL]
PNP SILICON TRANSISTOR; PNP硅晶体管
| 型号： | BCY78-X |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | PNP SILICON TRANSISTOR |
| 文件： | 总2页 (文件大小：77K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
BCY78, VII, VIII, IX, X
BCY79, VII, VIII, IX, X
PNP SILICON TRANSISTOR
JEDEC TO-18 CASE
DESCRIPTION
The CENTRAL SEMICONDUCTOR BCY78, BCY79 Series types are Silicon PNP Epitaxial Planar Transistors,
mounted in a hermetically sealed metal case, designed for low noise amplifier and switching applications.
MAXIMUM RATINGS (T =25°C unless otherwise noted)
A
SYMBOL
BCY78
32
BCY79
45
45
UNITS
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current (Peak)
Base Current (Peak)
Power Dissipation
V
V
V
CBO
CEO
EBO
32
V
V
mA
mA
mA
mW
W
5.0
100
200
200
340
1.0
I
I
I
P
P
C
CM
BM
D
D
Power Dissipation(T =25°C)
C
Operating and Storage
Junction Temperature
T ,T
-65 to +200
450
°C
°C/W
°C/W
J stg
Thermal Resistance
Thermal Resistance
Θ
JA
JC
Θ
150
ELECTRICAL CHARACTERISTICS (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
MAX
15
10
20
UNITS
nA
µA
nA
V
I
I
I
V
V
V
= Rated V
= Rated V
=5.0V
CBO
CBO
EBO
CB
CB
EB
CBO
CBO
, T =150°C
A
BV
BV
BV
BV
BV
I =10µA (BCY78)
32
45
32
45
5.0
CBO
CBO
CEO
CEO
EBO
C
I =10µA (BCY79)
V
V
V
V
V
V
V
V
C
I =2.0mA (BCY78)
C
I =2.0mA (BCY79)
C
I =1.0µA
E
V
V
V
V
V
I =10mA, I =250µA
0.25
0.80
0.85
1.20
0.75
CE(SAT)
CE(SAT)
BE(SAT)
BE(SAT)
BE(ON)
C
B
B
B
B
I =100mA, I =2.5mA
C
I =10mA, I =250µA
0.60
0.70
0.60
C
I =100mA, I =2.5mA
C
V
=5.0V, I =2.0mA
V
CE
C
BCY78-VII
BCY79-VII
BCY78-VIII
BCY79-VIII
BCY78-IX
BCY79-IX
BCY78-X
BCY79-X
SYMBOL
TEST CONDITIONS
MIN
MAX MIN
MAX MIN
MAX MIN
MAX
h
h
h
h
V
V
V
V
=5.0V, I =10µA
140 TYP
120 220
80
40
30
40
250
160
60
100
380
240
60
FE
FE
FE
FE
CE
CE
CE
CE
C
C
=5.0V, I =2.0mA
180
120
45
310
400
460
630
630
1000
=1.0V, I =10mA
C
=1.0V, I =100mA
C
(SEE REVERSE SIDE)
R3
BCY78/BCY79
PNP SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS Continued
SYMBOL
TEST CONDITIONS
MIN
100
TYP
MAX
UNITS
MHz
f
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
=5.0V, I =10mA, f=100MHz
C
T
CE
CB
EB
CE
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
C
C
NF
=10V, I =0, f=1.0MHz
7.0
15
10
100
50
50
700
600
100
100
35
pF
pF
dB
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ob
ib
E
=0.5V, I =0, f=1.0MHz
C
=5.0V, I =200µA, R =2kΩ, f=1.0kHz, B=200Hz
C
S
t
t
t
t
t
t
t
t
t
t
t
t
=3.0V, I =10mA, I =-I =1.0mA
on
d
r
off
s
f
on
d
r
off
s
f
C
C
C
C
C
C
B1 B2
B1 B2
B1 B2
B1 B2
B1 B2
B1 B2
B1 B2
B1 B2
B1 B2
B1 B2
B1 B2
B1 B2
=3.0V, I =10mA, I =-I =1.0mA
=3.0V, I =10mA, I =-I =1.0mA
=3.0V, I =10mA, I =-I =1.0mA
=3.0V, I =10mA, I =-I =1.0mA
=3.0V, I =10mA, I =-I =1.0mA
=10V, I =100mA, I =-I =10mA
C
C
C
C
C
C
=10V, I =100mA, I =-I =10mA
=10V, I =100mA, I =-I =10mA
65
=10V, I =100mA, I =-I =10mA
400
300
100
=10V, I =100mA, I =-I =10mA
=10V, I =100mA, I =-I =10mA
TO-18 PACKAGE - MECHANICAL OUTLINE
A
B
DIMENSIONS
INCHES
MILLIMETERS
D
E
SYMBOL MIN
MAX
MIN
5.31
4.52
-
MAX
5.84
4.95
0.76
5.33
-
A (DIA)
0.209 0.230
0.178 0.195
C
B (DIA)
C
-
0.030
D
0.170 0.210
4.32
12.70
0.41
E
0.500
-
F (DIA)
0.016 0.019
0.100
0.48
G (DIA)
2.54
1.27
F
H
I
J
0.050
0.036 0.046
0.028 0.048
0.91
0.71
1.17
1.22
G
H
LEAD #2
LEAD #1
TO-18 (REV: R1)
LEAD #3
I
J
45°
R1
Lead Code
1. Emitter
2. Base
3. Collector
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