BD139 [CENTRAL]
NPN SILICON TRANSISTOR; NPN硅晶体管
| 型号： | BD139 |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | NPN SILICON TRANSISTOR |
| 文件： | 总2页 (文件大小：235K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
Central
BD135
BD137
BD139
Semiconductor Corp.
NPN SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BD135,
BD137, and BD139 are NPN Silicon Epitaxial
Planar Transistors designed for audio amplifier
and switching applications.
MARKING: FULL PART NUMBER
TO-126 CASE
MAXIMUM RATINGS: (T =25°C)
SYMBOL BD135 BD137 BD139 UNITS
C
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
V
45
60
100
V
CBO
CEO
EBO
45
60
80
V
5.0
V
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Peak Base Current
I
1.5
A
C
I
2.0
A
CM
I
0.5
A
B
I
1.0
A
BM
Power Dissipation (T ≤70°C)
P
8.0
W
mb
D
Power Dissipation (T =25°C)
A
Operating and Storage Junction Temperature
P
D
1.25
-65 to +150
10
W
T , T
°C
°C/W
°C/W
J
stg
Thermal Resistance
Θ
Jmb
Thermal Resistance
Θ
100
JA
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
C
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
I
V
V
V
=30V
100
nA
CBO
CB
CB
EB
I
=30V, T =125°C
10
µA
nA
V
CBO
C
I
=5.0V
100
EBO
BV
I =30mA (BD135)
45
60
80
CEO
C
BV
I =30mA (BD137)
C
V
CEO
BV
I =30mA (BD139)
V
CEO
C
V
I =500mA, I =50mA
0.5
1.0
V
CE(SAT)
C
B
V
V
=2.0V, I =500mA
V
BE(ON)
CE
CE
CE
CE
CE
C
h
V
V
V
V
=2.0V, I =5.0mA
C
=2.0V, I =150mA
40
63
25
FE
h
250
FE
C
h
=2.0V, I =500mA
C
=5.0V, I =50mA, f=100MHz
FE
f
190
MHz
T
C
BD135-10
BD137-10
BD139-10
BD135-16
BD137-16
BD139-16
SYMBOL
TEST CONDITIONS
=2.0V, I =500mA
MIN
MAX
160
MIN
100
MAX
250
h
V
63
FE
CE
C
R3 (18-September 2009)
TM
BD135
BD137
BD139
Central
Semiconductor Corp.
NPN SILICON TRANSISTOR
TO-126 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Collector
3) Base
Mounting Pad is
Common to Pin 2
MARKING:
FULL PART NUMBER
R3 (18-September 2009)
相关型号：
BD139-10-T60-K
Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN
UTC
BD139-16
Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN
CENTRAL
BD139-16-T60-K
Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN
UTC
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