BFX89 [CENTRAL]
NPN SILICON RF TRANSISTORS; NPN硅射频晶体管
| 型号： | BFX89 |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | NPN SILICON RF TRANSISTORS |
| 文件： | 总2页 (文件大小：162K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
Central
BFX89
BFY90
Semiconductor Corp.
NPN SILICON
RF TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BFX89 and
BFY90 are Silicon NPN Epitaxial Planar Transistors
mounted in
a hermetically sealed package
designed for VHF/UHF amplifier, oscillator, and
converter applications.
MARKING CODE: FULL PART NUMBER
JEDEC TO-72 CASE
MAXIMUM RATINGS: (T =25°C)
A
SYMBOL
UNITS
Collector-Base Voltage
V
30
30
V
CBO
Collector-Emitter Voltage (R ≤50Ω)
BE
V
V
CER
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
15
V
CEO
V
2.5
25
V
EBO
I
mA
mA
mW
mW
C
Peak Collector Current (f ≥ 1 MHz)
Power Dissipation
I
50
CM
P
200
300
D
Power Dissipation (T =25°C)
C
P
D
Operating and Storage
Junction Temperature
Thermal Resistance
Thermal Resistance
T T
-65 to +200
875
°C
J, stg
Θ
°C/W
°C/W
JA
Θ
583
JC
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
BFX89
BFY90
SYMBOL TEST CONDITIONS
=15V
MIN TYP MAX
MIN TYP MAX
UNITS
I
V
10
10
nA
V
CBO
CB
BV
BV
BV
BV
h
I =10µA
30
30
15
2.5
30
30
15
2.5
CBO
CER
CEO
EBO
C
I =1.0mA, R =50Ω
V
C
BE
I =1.0mA
V
C
I =10µA
E
V
V
V
V
V
V
V
=1.0V, I =2.0mA
20
20
150
125
25
150
125
FE
CE
CE
CE
CE
CB
CE
C
h
f
=1.0V, I =25mA
C
20
FE
=5.0V, I =2.0mA, f=500MHz
1.0
1.2
1.0 1.1
1.3 1.4
GHz
GHz
pF
T
C
f
=5.0V, I =25mA, f=500MHz
C
T
C
C
=10V, I =0, f=1.0MHz
1.7
1.5
ob
re
E
=5.0V, I =2.0mA, f=1.0MHz
C
0.6
0.6 0.8
pF
R3 (20-March 2006)
TM
BFX89
BFY90
Central
Semiconductor Corp.
NPN SILICON
RF TRANSISTORS
ELECTRICAL CHARACTERISTICS (CONTINUED): (T =25°C unless otherwise noted)
A
BFX89
BFY90
MIN TYP MAX
SYMBOL TEST CONDITIONS
MIN TYP MAX
UNITS
dB
G
G
G
G
V
V
V
V
V
V
V
V
V
V
=10V, I =8mA, f=200MHz
C
19
22
pe
pe
pe
pe
CE
CE
CE
CE
CE
CE
CE
CE
CE
CE
=10V, I =8mA, f=800MHz
7.0
dB
C
=10V, I =14mA, f=200MHz
C
21
23
dB
=10V, I =14mA, f=800MHz
8.0
dB
C
NF
NF
NF
NF
=5.0V, I =2.0mA, f=100kHz
C
4.0
dB
=5.0V, I =2.0mA, f=200MHz
3.3 4.0
6.5
2.5 3.5
5.0
dB
C
=5.0V, I =2.0mA, f=500MHz, R =50Ω
dB
C
G
=5.0V, I =2.0mA, f=800MHz
7.0
5.5
dB
C
P
o
=10V, I =8mA, f=205MHz
C
6.0
mW
mW
P
=10V, I =14mA, f=205MHz
10
12
o
C
JEDEC TO-72 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) EMITTER
2) BASE
3) COLLECTOR
4) CASE
R3 (20-March 2006)
相关型号：
BFX94
Small Signal Bipolar Transistor, 0.8A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-18
MICRO-ELECTRO
BFX95
Small Signal Bipolar Transistor, 0.8A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-18
MICRO-ELECTRO
BFX95A
Small Signal Bipolar Transistor, 0.8A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-18
MICRO-ELECTRO
BFX96
TRANSISTOR TRANSISTOR,BJT,NPN,30V V(BR)CEO,800MA I(C),TO-5, BIP General Purpose Small Signal
ONSEMI
BFX96A
Small Signal Bipolar Transistor, 0.8A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-39
MICRO-ELECTRO
BFX97
Small Signal Bipolar Transistor, 0.8A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-39
MICRO-ELECTRO
BFX97
TRANSISTOR TRANSISTOR,BJT,NPN,30V V(BR)CEO,800MA I(C),TO-5, BIP General Purpose Small Signal
ONSEMI
BFX97A
Small Signal Bipolar Transistor, 0.8A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-39
MICRO-ELECTRO
BFX98LEADFREE
Small Signal Bipolar Transistor, 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN
CENTRAL
©2020 ICPDF网 联系我们和版权申明