CBAT754ALEADFREE [CENTRAL]
Rectifier Diode, Schottky, 2 Element, 0.2A, Silicon, SOT-23, 3 PIN;
| 型号： | CBAT754ALEADFREE |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Rectifier Diode, Schottky, 2 Element, 0.2A, Silicon, SOT-23, 3 PIN 整流二极管 肖特基二极管 光电二极管 |
| 文件： | 总2页 (文件大小：114K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
CBAT754
Central
CBAT754A
CBAT754C
CBAT754S
Semiconductor Corp.
DESCRIPTION:
SURFACE MOUNT
SILICON SCHOTTKY DIODES
The CENTRAL SEMICONDUCTOR CBAT754
Series types are Silicon Schottky Diodes in an
SOT-23 Surface Mount Package.
SOT-23 CASE
CBAT754:
SINGLE
MARKING CODE: C2K
MARKING CODE: C2LA
MARKING CODE: C2MC
MARKING CODE: C2NS
CBAT754A:
CBAT754C:
CBAT754S:
DUAL, COMMON ANODE
DUAL, COMMON CATHODE
DUAL, IN SERIES
MAXIMUM RATINGS: (T =25°C)
A
SYMBOL
UNITS
Continuous Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Forward Surge Current, tp=10ms
Power Dissipation
V
30
V
R
F
I
200
300
600
350
mA
mA
mA
mW
I
I
FRM
FSM
P
D
Operating and Storage
Junction Temperature
Thermal Resistance
T , T
stg
-65 to +150
357
°C
°C/W
J
Θ
JA
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MAX
UNITS
I
V =25V
2.0
200
260
340
420
500
10
µA
mV
mV
mV
mV
mV
pF
R
R
V
V
V
V
V
I =0.1mA
F
F
F
F
F
F
I =1.0mA
F
I =10mA
F
I =30mA
F
I =100mA
F
C
V =1.0V, f=1.0 MHz
d
R
t
I =I =10mA, I =1.0mA, R =100Ω
rr
5.0
ns
rr
F
R
L
R0 (27-January 2005)
TM
CBAT754
CBAT754A
CBAT754C
CBAT754S
Central
Semiconductor Corp.
SURFACE MOUNT
SILICON SCHOTTKY DIODES
SOT-23 CASE - MECHANICAL OUTLINE
2
1
2
1
2
1
2
1
D1
D2
D1
D2
D1
D2
3
3
3
3
LEAD CODE:
LEAD CODE:
LEAD CODE:
LEAD CODE:
CBAT754
CBAT754A
CBAT754C
1) Anode D2
2) Anode D1
CBAT754S
1) Anode
1) Cathode D2
2) Cathode D1
1) Anode D2
2) Cathode D1
2) No Connection
3) Cathode
3) Anode D1, Anode D2
3) Cathode D1, Cathode D2 3) Anode D1, Cathode D2
MARKING
MARKING
MARKING
MARKING
CODE: C2K
CODE: C2LA
CODE: C2MC
CODE: C2NS
R0 (27-January 2005)
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