CBR1-D100STR13PBFREE [CENTRAL]
Bridge Rectifier Diode, 1A, 1000V V(RRM),;
| 型号： | CBR1-D100STR13PBFREE |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Bridge Rectifier Diode, 1A, 1000V V(RRM), 二极管 |
| 文件： | 总2页 (文件大小：403K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CBR1-D020S SERIES
www.centralsemi.com
SURFACE MOUNT
1 AMP
SILICON BRIDGE RECTIFIER
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBR1-D020S series
types are silicon full wave bridge rectifiers mounted in a
durable epoxy surface mount molded case, utilizing glass
passivated chips.
NOTE: Also available in Fast Recovery, please
contact factory for details.
MARKING: FULL PART NUMBER
SMDIP CASE
MAXIMUM RATINGS:
A
CBR1-
D020S
CBR1-
D040S
CBR1-
D060S
CBR1- CBR1-
D080S D100S
(T =25°C unless otherwise noted)
SYMBOL
UNITS
Peak Repetitive Reverse Voltage
DC Blocking Voltage
RMS Reve
V
200
200
140
400
400
280
600
600
420
1.0
50
800
800
560
1000
1000
700
V
V
RRM
V
R
V
V
R(RMS)
Average Forward Current (T =50°C)
A
Peak Forward Surge Current
I
A
O
I
A
A2s
FSM
I2t
Rating for Fusing (t<8.35ms)
10
Operating and Storage
Junction Temperature
T , T
-65 to +150
°C
J
stg
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
µA
I
I
V =Rated V
10
0.5
1.1
R
R
RRM
RRM
V =Rated V
, T =125°C
mA
V
R
R
A
V
I =1.0A
F
F
C
V =4.0V, f=1.0MHz
25
pF
J
R
R3 (4-January 2010)
CBR1-D020S SERIES
SURFACE MOUNT
1 AMP
SILICON BRIDGE RECTIFIER
SMDIP CASE - MECHANICAL OUTLINE
MARKING: FULL PART NUMBER
R3 (4-January 2010)
www.centralsemi.com
相关型号：
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