CBR1U-D010SLEADFREE [CENTRAL]
Bridge Rectifier Diode, Schottky, 1 Phase, 1A, 100V V(RRM), Silicon, SURFACE MOUNT, PLASTIC, DIP-4;
| 型号： | CBR1U-D010SLEADFREE |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Bridge Rectifier Diode, Schottky, 1 Phase, 1A, 100V V(RRM), Silicon, SURFACE MOUNT, PLASTIC, DIP-4 光电二极管 |
| 文件： | 总2页 (文件大小：403K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CBR1U-D010S
CBR1U-D020S
www.centralsemi.com
SURFACE MOUNT
1 AMP ULTRA FAST
SILICON BRIDGE RECTIFIER
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBR1U-D010S,
CBR1U-D020S types are silicon full wave ultra fast
bridge rectifiers mounted in a durable epoxy surface
mount molded case, utilizing glass passivated chips.
MARKING: FULL PART NUMBER
SMDIP CASE
MAXIMUM RATINGS:
(T =25°C unless otherwise noted)
A
SYMBOL
CBR1U-D010S
CBR1U-D020S
UNITS
Peak Repetitive Reverse Voltage
V
100
100
70
200
200
140
V
V
V
A
A
RRM
DC Blocking Voltage
V
R
RMS Reverse Voltage
V
R(RMS)
Average Forward Current (T =40°C)
A
I
1.0
50
O
Peak Forward Surge Current
Operating and Storage
Junction Temperature
Thermal Resistance
I
FSM
T , T
-65 to +150
40
°C
J
stg
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
MAX
5.0
UNITS
µA
I
I
V =Rated V
R
R
RRM
RRM
V =Rated V
, T =125°C
1.0
mA
V
R
R
A
V
I =1.0A
1.05
50
F
F
t
I =500mA, I =1.0A, I =250mA
ns
rr
F
R
rr
R3 (4-January 2010)
CBR1U-D010S
CBR1U-D020S
SURFACE MOUNT
1 AMP ULTRA FAST
SILICON BRIDGE RECTIFIER
SMDIP CASE - MECHANICAL OUTLINE
MARKING: FULL PART NUMBER
R3 (4-January 2010)
www.centralsemi.com
相关型号：
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