CBR2F-100LEADFREE [CENTRAL]
Bridge Rectifier Diode, 1 Phase, 2A, 1000V V(RRM), Silicon, CASE A;
| 型号： | CBR2F-100LEADFREE |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Bridge Rectifier Diode, 1 Phase, 2A, 1000V V(RRM), Silicon, CASE A 二极管 |
| 文件： | 总2页 (文件大小：572K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CBR1F SERIES
CBR2F SERIES
www.centralsemi.com
FAST RECOVERY
SILICON BRIDGE RECTIFIERS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBR1F and CBR2F
series types are silicon, single phase, full wave bridge
rectifiers designed for fast switching applications.
MARKING: FULL PART NUMBER
CASE A
MAXIMUM RATINGS: (T =50°C)
CBR1F CBR1F CBR1F CBR1F CBR1F CBR1F
CBR2F CBR2F CBR2F CBR2F CBR2F CBR2F
A
SYMBOL -010
-020
200
-040
400
-060
600
-080
800
-100 UNITS
Peak Repetitive Reverse Voltage
DC Blocking Voltage
V
100
100
70
1000
1000
700
V
V
V
A
A
A
A
RRM
V
200
140
400
280
600
420
800
560
R
RMS Reverse Voltage
V
R(RMS)
Average Forward Current (CBR1F)
Average Forward Current (CBR2F)
Peak Forward Surge Current (CBR1F)
Peak Forward Surge Current (CBR2F)
I
I
1.5
2.0
50
O
O
I
I
FSM
FSM
60
Operating and Storage
Junction Temperature
T , T
-65 to +150
°C
J
stg
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
I
V =Rated V
10
μA
mA
V
R
R
RRM
RRM
I
V =Rated V
, T =100°C
1.0
1.3
R
R
A
V
V
(CBR1F)
(CBR2F)
I =1.0A
F
F
F
I =2.0A
1.3
V
F
t
t
t
(100V, 200V, 400V) I =0.5A, I =1.0A, I =0.25A
200
350
500
ns
ns
ns
rr
F
R
rr
(600V, 800V)
(1000V)
I =0.5A, I =1.0A, I =0.25A
rr
rr
F
R
rr
I =0.5A, I =1.0A, I =0.25A
F
R
rr
R1 (18-June 2013)
CBR1F SERIES
CBR2F SERIES
FAST RECOVERY
SILICON BRIDGE RECTIFIERS
CASE A - MECHANICAL OUTLINE
MARKING:
FULL PART NUMBER
R1 (18-June 2013)
www.centralsemi.com
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