CBR50-020PPBFREE [CENTRAL]
Bridge Rectifier Diode,;
| 型号： | CBR50-020PPBFREE |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Bridge Rectifier Diode, |
| 文件： | 总2页 (文件大小：86K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
CBR50-020P SERIES
Central
Semiconductor Corp.
50 AMP
SILICON BRIDGE RECTIFIER
200 thru 1000 VOLTS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBR50-020P
series types are silicon single phase full wave
bridge rectifiers designed for general purpose
applications. The molded epoxy case has a built in
metal baseplate for heat sink mounting.
MARKING CODE: FULL PART NUMBER
CASE FP
MAXIMUM RATINGS (T =25°C)
A
CBR50- CBR50- CBR50- CBR50- CBR50-
SYMBOL
020P
200
200
140
040P
400
400
280
060P
600
600
420
50
080P
800
800
560
100P
1000
1000
700
UNITS
Peak Repetitive Reverse Voltage
DC Blocking Voltage
V
V
V
V
A
A
RRM
V
R
RMS Reverse Voltage
V
R(RMS)
Average Forward Current (T =55°C)
I
O
C
Peak Forward Surge Current
I
400
FSM
Operating and Storage
Junction Temperature
T , T
stg
-65 to +150
1.5
°C
J
Thermal Resistance
Θ
°C/W
JC
RMS Isolation Voltage (case to lead)
V
2500
V
ac
iso
ELECTRICAL CHARACTERISTICS PER DIODE (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
TYP
MAX
UNITS
µA
I
V =Rated V T =25°C
5.0
500
1.1
R
R
R
RRM,
C
I
V =Rated V
, T =125°C
µA
R
RRM
C
V
I =25A
V
F
F
C
V =4.0V, f=1.0MHz
300
pF
J
R
R0 (31-August 2004)
TM
CBR50-020P SERIES
Central
Semiconductor Corp.
50 AMP
SILICON BRIDGE RECTIFIER
200 thru 1000 VOLTS
CASE FP - MECHANICAL OUTLINE
DIMENSIONS
SYMBOL
INCHES
MILLIMETERS
MIN MAX
MIN
MAX
A
B
C
D
E
1.115 1.135 28.32 28.83
0.692 0.732 17.58 18.59
1.115 1.135 28.32 28.83
0.542 0.582 13.77 14.78
0.632 0.672 16.05 17.07
MARKING CODE:
FULL PART NUMBER
F (DIA.) 0.200 0.220
5.08
5.59
G
0.632 0.672 16.05 17.07
0.740 0.840 18.80 21.34
H
J
0.290 0.310
0.030 0.034
0.250
7.37
0.76
7.87
0.86
K
L
6.35
2.39
M (DIA.)
0.940
CASE FP (REV:R1)
R0 (31-August 2004)
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