CBRHD-01TR13PBFREE [CENTRAL]
Bridge Rectifier Diode, 0.8A, 100V V(RRM),;
| 型号： | CBRHD-01TR13PBFREE |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Bridge Rectifier Diode, 0.8A, 100V V(RRM), 二极管 |
| 文件： | 总2页 (文件大小：645K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CBRHD-01
SURFACE MOUNT
HIGH DENSITY
0.8 AMP
SILICON BRIDGE RECTIFIER
www.centralsemi.com
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBRHD-01 is a
silicon full wave bridge rectifier mounted in a durable
epoxy surface mount molded case, utilizing glass
passivated chips.
MARKING CODE: CBD1
FEATURES:
• Efficient use of board space: requires only 42mm2 of board
space vs. 120mm2 of board space needed for industry
standard 1.0 Amp surface mount bridge rectifier.
• 50% higher density (Amps/mm2) than the industry standard
1.0 Amp surface mount bridge rectifier.
HD DIP CASE
• This series is UL listed: file number E130224
• Glass passivated chips for high reliability.
MAXIMUM RATINGS: (T =25°C unless otherwise noted)
SYMBOL
UNITS
A
Peak Repetitive Reverse Voltage
V
100
V
V
RRM
DC Blocking Voltage
V
100
R
RMS Reverse Voltage
V
70
V
R(RMS)
Average Forward Current (T =40°C) (Note1)
I
0.5
A
A
O
O
Average Forward Current (T =40°C) (Note 2)
I
0.8
30
A
A
Peak Forward Surge Current
I
A
FSM
T , T
Operating and Storage Junction Temperature
Thermal Resistance (Note 3)
-65 to +150
85
°C
°C/W
J
stg
Θ
JA
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
V = 100V
TYP
MAX
5.0
UNITS
µA
I
I
R
R
V = 100V, T =125°C
500
1.0
µA
R
R
A
V
I =400mA
V
F
F
C
V =4.0V, f=1.0MHz
9.0
pF
J
R
Notes: (1) Mounted on Glass-Epoxy PCB.
(2) Mounted on Ceramic PCB.
(3) Mounted on PCB with 0.5” x 0.5” copper pads.
R2 (4-January 2010)
CBRHD-01
SURFACE MOUNT
HIGH DENSITY
0.8 AMP
SILICON BRIDGE RECTIFIER
HD DIP CASE - MECHANICAL OUTLINE
MARKING CODE: CBD1
R2 (4-January 2010)
www.centralsemi.com
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