CBRHD-04PBFREE [CENTRAL]
Bridge Rectifier Diode,;
| 型号： | CBRHD-04PBFREE |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Bridge Rectifier Diode, 整流二极管 桥式整流二极管 光电二极管 |
| 文件： | 总2页 (文件大小：147K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
CBRHD SERIES
Central
Semiconductor Corp.
HIGH DENSITY SURFACE MOUNT
½ AMP DUAL IN LINE
FEATURES:
BRIDGE RECTIFIER
• Truly efficient use of board space, requires
only 42mm² of board space vs. 120mm² of board
space for industry standard 1.0 Amp surface
mount bridge rectifier.
TM
HD
BRIDGE
• 50% higher density (amps/mm²) than the industry
standard 1.0 Amp surface mount bridge rectifier.
HDDIP CASE
• Glass passivated chips for high reliability.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBRHD series types are silicon full wave bridge rectifiers mounted
in a durable epoxy surface mount molded case, utilizing glass passivated chips.
MAXIMUM RATINGS: (T =25°C unless otherwise noted)
A
CBRHD CBRHD CBRHD CBRHD
SYMBOL
-02
200
200
140
-04
400
400
280
-06
600
600
420
-10* UNITS
Peak Repetitive Reverse Voltage
DC Blocking Voltage
V
1000
1000
700
V
V
V
A
A
A
RRM
V
R
RMS Reverse Voltage
V
R(RMS)
Average Forward Current (T =40°C)(1) I
0.5
0.8
30
A
O
Average Forward Current (T =40°C)(2) I
A
O
Peak Forward Surge Current
Operating and Storage
Junction Temperature
I
FSM
T ,T
J stg
-65 to +150
°C
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
V
F
I =400mA (Per Diode)
F
1.0
5.0
V
mA
mA
pF
I
V =Rated V
R
R
R
RRM
I
V =Rated V
, T =125°C
500
R
RRM
A
C
V =4.0V, f=1.0MHz
20
J
R
(1) Mounted on a Glass-Epoxy P.C.B.
(2) Mounted on a Ceramic P.C.B.
*Available on special order, please consult factory.
104
All dimensions in inches (mm).
TOP VIEW
105
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