CBRLDSH2-40 [CENTRAL]
SURFACE MOUNT HIGH DENSITY HIGH DENSITY SCHOTTKY BRIDGE RECTIFIER;![CBRLDSH2-40](http://pdffile.icpdf.com/pdf2/p00339/img/icpdf/CBRLDSH2-40-_2087465_icpdf.jpg)
型号: | CBRLDSH2-40 |
厂家: | ![]() |
描述: | SURFACE MOUNT HIGH DENSITY HIGH DENSITY SCHOTTKY BRIDGE RECTIFIER |
文件: | 总3页 (文件大小:926K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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CBRLDSH2-40
SURFACE MOUNT
HIGH DENSITY
2 AMP SILICON
www.centralsemi.com
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBRLDSH2-40
is a full wave Schottky bridge rectifier mounted in a
low profile epoxy surface mount molded case, utilizing
glass passivated chips.
SCHOTTKY BRIDGE RECTIFIER
MARKING CODE: CL40
LPDIP CASE
FEATURES:
• Low leakage current (5.5μA TYP @ V
• High 2.0A current rating
)
APPLICATIONS:
RRM
• Input rectification
• Polarity protection
• Steering diode array
• Low V Schottky diodes (480mV TYP @ I =2.0A)
• Low profile package (1.6mm MAX)
F
F
MAXIMUM RATINGS: (T =25°C unless otherwise noted)
Peak Repetitive Reverse Voltage
DC Blocking Voltage
SYMBOL
UNITS
V
A
V
40
RRM
V
40
V
V
R
RMS Reverse Voltage
V
28
2.0
R(RMS)
Average Forward Current (T =50°C)
L
I
A
O
Peak Forward Surge Current
Operating Junction Temperature
Storage Temperature
I
50
A
FSM
T
-55 to +125
-55 to +150
95
°C
°C
°C/W
J
T
stg
Thermal Resistance
Θ
JA
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
V =40V
TYP
5.5
MAX
100
UNITS
μA
I
R
R
I
V =40V, T =100°C
2.0
480
155
20
mA
mV
pF
R
R
A
V
I =2.0A
500
250
F
F
C
V =4.0V, f=1.0MHz
R
J
R1 (26-November 2012)
CBRLDSH2-40
SURFACE MOUNT
HIGH DENSITY
2 AMP SILICON
SCHOTTKY BRIDGE RECTIFIER
LPDIP CASE - MECHANICAL OUTLINE
MARKING CODE: CL40
R1 (26-November 2012)
www.centralsemi.com
CBRLDSH2-40
SURFACE MOUNT
HIGH DENSITY
2 AMP SILICON
SCHOTTKY BRIDGE RECTIFIER
TYPICAL ELECTRICAL CHARACTERISTICS
R1 (26-November 2012)
www.centralsemi.com
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