CEDM7004TRLEADFREE [CENTRAL]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;
| 型号： | CEDM7004TRLEADFREE |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
| 文件： | 总3页 (文件大小：1001K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CEDM7004
SURFACE MOUNT
N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
www.centralsemi.com
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CEDM7004
is an Enhancement-mode N-Channel Field Effect
Transistor, manufactured by the N-Channel DMOS
Process, designed for high speed pulsed amplifier and
driver applications. This MOSFET offers Low r
and Low Theshold Voltage.
DS(on)
MARKING CODE: S
FEATURES:
• ESD Protection up to 2kV
• 0.4mm Low Package Profile
SOT-883L CASE
• Devices are Halogen Free by design
• Low r
• Low Threshold Voltage
DS(on)
APPLICATIONS:
• Load/Power Switches
• Power Supply Converter Circuits
• Battery Powered Portable Devices
• Logic Level Compatible
• Small, TLP™ 1x0.6mm, SOT-883L
Leadless Surface Mount Package
MAXIMUM RATING: (T =25°C)
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
UNITS
V
V
A
A
A
A
mW
°C
A
V
V
I
30
8.0
1.78
3.56
1.78
DS
GS
D
Continuous Drain Current (T =25°C)
L
Peak Drain Current, tp≤10μs (T =25°C)
I
I
L
DM
S
SM
D
Continuous Source Current (T =25°C)
I
L
Peak Source Current, tp≤10μs (T =25°C)
L
3.56
100
Power Dissipation
P
Operating and Storage Junction Temperature
T , T
-65 to +150
J
stg
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
I
I
, I
V
=8.0V, V =0
3.0
1.0
μA
μA
V
V
V
mΩ
mΩ
mΩ
nC
nC
nC
mS
pF
pF
pF
ns
GSSF GSSR GS
DS
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
=30V, V =0
DSS
DS
GS
GS
=0, I =10μA
BV
V
V
r
r
r
30
0.5
0.5
DSS
GS(th)
SD
DS(ON)
DS(ON)
DS(ON)
D
=V , I =250μA
1.0
1.1
460
560
730
DS GS
D
=0, I =400mA
GS
GS
GS
GS
DS
DS
DS
DS
DS
DS
DS
DS
DS
S
=4.5V, I =200mA
280
390
550
D
D
D
=2.5V, I =100mA
=1.8V, I =75mA
Q
Q
Q
=15V, V =4.5V, I =1.0A
0.792
0.15
0.23
g(tot)
gs
GS
D
=15V, V =4.5V, I =1.0A
GS
D
=15V, V =4.5V, I =1.0A
=10V, I =100mA
=25V, V =0, f=1.0MHz
=25V, V =0, f=1.0MHz
GS
=25V, V =0, f=1.0MHz
=5.0V, V =4.0V, I =75mA, R =10Ω
GS
=5.0V, V =4.0V, I =75mA, R =10Ω
gd
FS
rss
iss
oss
on
off
GS
D
GS
D
g
200
C
C
C
t
t
5.0
43
8.0
20
75
GS
D
G
ns
GS
D
G
R4 (2-August 2011)
CEDM7004
SURFACE MOUNT
N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
SOT-883L CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
(Bottom View)
LEAD CODE:
1) Gate
2) Source
3) Drain
MARKING CODE: S
R4 (2-August 2011)
www.centralsemi.com
CEDM7004
SURFACE MOUNT
N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
TYPICAL ELECTRICAL CHARACTERISTICS
R4 (2-August 2011)
www.centralsemi.com
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