CEN-U10LEADFREE [CENTRAL]
Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-202, Plastic/Epoxy, 3 Pin, TO-202, 3 PIN;
| 型号： | CEN-U10LEADFREE |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-202, Plastic/Epoxy, 3 Pin, TO-202, 3 PIN 局域网 放大器 晶体管 |
| 文件： | 总2页 (文件大小：419K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CEN-U10
www.centralsemi.com
NPN SILICON
POWER TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CEN-U10 type
is an NPN silicon power transistor designed for high
voltage amplifier applications. This device is an
electrical equivalent to Motorola’s MPSU10.
MARKING: FULL PART NUMBER
TO-202 CASE
MAXIMUM RATINGS: (T =25°C unless otherwise noted)
A
SYMBOL
UNITS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
V
300
300
V
CBO
CEO
EBO
V
V
V
V
6.0
I
0.5
A
C
P
1.75
10
W
D
D
Power Dissipation (T =25°C)
C
P
W
Operating and Storage Junction Temperature
T , T
-65 to +150
70
°C
J
stg
Thermal Resistance
Θ
°C/W
°C/W
JA
JC
Thermal Resistance
Θ
12.5
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
I
V
=200V
200
nA
CBO
CB
I
V
=6.0V
100
nA
V
EBO
EB
BV
BV
BV
l =100μA
300
300
6.0
CBO
CEO
EBO
C
l =1.0mA
V
C
l =100μA
V
E
V
V
l =20mA, I =2.0mA
1.5
0.8
V
CE(SAT)
BE(SAT)
FE
C
B
l =20mA, I =2.0mA
V
C
B
h
h
h
V
=10V, I =1.0mA
25
40
40
45
CE
CE
CE
CE
CB
C
V
V
V
V
=10V, I =10mA
FE
C
=10V, l =30mA
FE
C
f
=20V, l =10mA, f=100MHz
MHz
pF
T
C
C
=20V, I =0, f=1.0MHz
3.0
ob
E
R2 (23-January 2012)
CEN-U10
NPN SILICON
POWER TRANSISTOR
TO-202 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base
3) Collector
Tab is common to pin 3
MARKING:
FULL PART NUMBER
R2 (23-January 2012)
www.centralsemi.com
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