CET3906ETR [CENTRAL]
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, 1 X 0.40 MM, LEADLESS, TLP, 3 PIN;
| 型号： | CET3906ETR |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, 1 X 0.40 MM, LEADLESS, TLP, 3 PIN |
| 文件： | 总2页 (文件大小：364K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CET3904E NPN
CET3906E PNP
www.centralsemi.com
ENHANCED SPECIFICATION
SURFACE MOUNT
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CET3904E /
CET3906E Low V NPN and PNP Transistors,
COMPLEMENTARY
SILICON TRANSISTORS
CE(SAT)
respectively, are designed for applications where
ultra small size and power dissipation are the prime
requirements. Packaged in a Tiny Leadless Package
TLP™, these components provide performance
characteristics suitable for the most demanding size
constrained applications.
MARKING CODES: CET3904E: C
CET3906E: D
SOT-883L CASE
FEATURES:
APPLICATIONS:
• Device is Halogen Free by design
• DC / DC Converters
• 250mW Power Dissipation
• Battery powered devices including Cell Phones
and Digital Cameras
• Low V
0.1V Typ @ 50mA
CE(SAT)
• Small,TLP™1x0.4mm,SOT-883L Leadless
,
Low Profile, Surface Mount Package
MAXIMUM RATINGS: (T =25°C)
SYMBOL
UNITS
A
Collector-Base Voltage
V
60
40
V
V
♦
♦
CBO
Collector-Emitter Voltage
V
CEO
Emitter-Base Voltage
V
6.0
V
EBO
Continuous Collector Current
Power Dissipation (Note 1)
Power Dissipation (Note 2)
Operating and Storage Junction Temperature
Thermal Resistance (Note 1)
Thermal Resistance (Note 2)
I
200
mA
mW
mW
°C
C
P
250
D
D
P
430
T , T
-65 to +150
500
J
stg
Θ
°C/W
°C/W
JA
JA
Θ
290
ELECTRICAL CHARACTERISTICS:
NPN
TYP
PNP
TYP
SYMBOL
TEST CONDITIONS
=30V, V =3.0V
MIN
MAX
UNITS
I
V
50
nA
V
CEV
CE
I =10µA
EB
BV
BV
BV
60
40
115
60
90
55
♦
♦
CBO
CEO
C
I =1.0mA
V
C
I =10µA
E
6.0
7.5
7.9
V
EBO
♦ V
I =10mA, I =1.0mA
0.057
0.100
0.75
0.85
0.050
0.100
0.75
0.85
0.100
0.200
0.85
V
CE(SAT)
C
B
V
)
I =50mA, I =5.0mA
V
♦
CE(SAT
C
B
V
V
I =10mA, I =1.0mA
0.65
V
BE(SAT)
BE(SAT)
C
B
I =50mA, I =5.0mA
0.95
V
C
B
Enhanced specification
♦
Notes: (1) FR-4 epoxy PC board, standard mounting conditions
(2) FR-4 epoxy PC board with collector mounting pad area of 1 cm2
R2 (4-January 2010)
CET3904E NPN
CET3906E PNP
ENHANCED SPECIFICATION
SURFACE MOUNT
COMPLEMENTARY
SILICON TRANSISTORS
ELECTRICAL CHARACTERISTICS - Continued:
NPN
TYP
PNP
TYP
SYMBOL
TEST CONDITIONS
MIN
90
MAX
UNITS
h
V
=1.0V, I =0.1mA
240
130
♦
FE
CE
C
♦ h
V
V
=1.0V, I =1.0mA
C
100
100
235
215
150
150
FE
FE
CE
CE
h
=1.0V, I =10mA
C
300
h
V
=1.0V, I =50mA
70
110
120
♦
FE
CE
C
h
f
V
V
=1.0V, I =100mA
30
300
50
55
FE
CE
CE
C
=20V, I =10mA, f=100MHz
MHz
pF
T
C
C
V
V
V
V
V
V
V
=5.0V, I =0, f=1.0MHz
4.0
8.0
12
ob
ib
CB
BE
CE
CE
CE
CE
CE
E
C
=0.5V, I =0, f=1.0MHz
pF
C
h
h
h
h
=10V, I =1.0mA, f=1.0kHz
1.0
0.1
100
1.0
kΩ
X10-4
ie
C
=10V, I =1.0mA, f=1.0kHz
C
10
re
fe
=10V, I =1.0mA, f=1.0kHz
400
60
C
=10V, I =1.0mA, f=1.0kHz
μS
dB
oe
C
NF
=5.0V, I =100μA, R =1.0KΩ,
4.0
C
S
f=10Hz to 15.7kHz
t
t
t
t
V
V
V
V
=3.0V, V =0.5V, I =10mA, I =1.0mA
BE B1
35
35
ns
ns
ns
ns
d
r
CC
CC
CC
CC
C
=3.0V, V =0.5V, I =10mA, I =1.0mA
BE B1
C
=3.0V, I =10mA, I =I =1.0mA
200
50
s
f
C
B1 B2
=3.0V, I =10mA, I =I =1.0mA
C
B1 B2
Enhanced specification
♦
SOT-883L CASE - MECHANICAL OUTLINE
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
MARKING CODES:
CET3904E: C
CET3906E: D
R2 (4-January 2010)
www.centralsemi.com
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