CJD127TR13PBFREE [CENTRAL]
Transistor,;
| 型号： | CJD127TR13PBFREE |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Transistor, |
| 文件： | 总2页 (文件大小：557K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CJD122 NPN
CJD127 PNP
www.centralsemi.com
SURFACE MOUNT SILICON
COMPLEMENTARY
POWER DARLINGTON TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CJD122 and
CJD127 are complementary silicon power Darlington
transistors manufactured in a surface mount package
designed for low speed switching and amplifier
applications.
MARKING: FULL PART NUMBER
DPAK CASE
MAXIMUM RATINGS: (T =25°C unless otherwise noted)
C
SYMBOL
UNITS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
V
V
V
100
100
5.0
8.0
16
V
V
V
A
A
mA
W
W
°C
°C/W
°C/W
CBO
CEO
EBO
I
C
I
CM
I
120
20
B
P
P
D
D
Power Dissipation (T =25°C)
1.75
-65 to +150
6.25
71.4
A
Operating and Storage Junction Temperature
Thermal Resistance
T , T
J
stg
JC
JA
Θ
Θ
Thermal Resistance
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
C
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
I
I
I
I
I
V
V
V
V
V
=50V
10
μA
CEO
CEV
CEV
CBO
EBO
CEO
CE(SAT)
CE(SAT)
BE(SAT)
BE(ON)
FE
FE
T
ob
ob
fe
CE
CE
CE
CB
EB
=100V, V
=100V, V
=100V
=1.5V
=1.5V, T =125°C
10
500
10
μA
μA
μA
mA
V
V
V
V
V
BE(off)
BE(off)
C
=5.0V
2.0
BV
I =30mA
100
C
V
V
V
V
h
h
f
C
C
h
I =4.0A, I =16mA
2.0
4.0
4.5
2.8
12000
C
B
B
B
I =8.0A, I =80mA
C
I =8.0A, I =80mA
C
V
=4.0V, I =4.0A
=4.0V, I =4.0A
=4.0V, I =8.0A
=4.0V, I =3.0A, f=1.0MHz
=10V, I =0, f=1.0MHz (CJD122)
=10V, I =0, f=1.0MHz (CJD127)
=4.0V, I =3.0A, f=1.0kHz
CE
CE
CE
CE
CB
CB
CE
C
C
C
C
V
V
V
V
V
V
1000
100
4.0
MHz
pF
pF
200
300
300
E
E
C
R3 (21-January 2013)
CJD122 NPN
CJD127 PNP
SURFACE MOUNT SILICON
COMPLEMENTARY
POWER DARLINGTON TRANSISTORS
DPAK CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Collector
3) Emitter
4) Collector
MARKING:
FULL PART NUMBER
R3 (21-January 2013)
www.centralsemi.com
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