CM5943DPBFREE [CENTRAL]
Transistor,;
| 型号： | CM5943DPBFREE |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Transistor, |
| 文件： | 总2页 (文件大小：93K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CM5943
NPN SILICON
HIGH FREQUENCY TRANSISTOR
JEDEC TO-39 CASE
DESCRIPTION
The CENTRAL SEMICONDUCTOR CM5943 is a Silicon NPN RF Transistor, mounted in a hermetically sealed package,
designed for high frequency amplifier and non-saturated switching applications. This device is a replacement for the
2N5943.
MAXIMUM RATINGS (T =25°C unless otherwise noted)
A
SYMBOL
UNITS
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
V
V
40
30
3.5
400
1.0
3.5
CBO
CEO
EBO
V
V
mA
W
W
I
P
P
C
D
D
Power Dissipation
Power Dissipation (T =25°C)
C
Operating and Storage
Junction Temperature
T ,T
-65 to +200
°C
°C/W
°C/W
J stg
Thermal Resistance
Thermal Resistance
Θ
175
50
JA
JC
Θ
ELECTRICAL CHARACTERISTICS (T =25°C unless otherwise noted)
A
SYMBOL
CBO
CEO
TEST CONDITIONS
MIN
TYP
MAX
10
50
UNITS
µA
µA
V
V
V
I
I
V
V
=15V
=20V
CB
CE
BV
BV
BV
I =100µA
40
30
3.5
CBO
CEO
EBO
C
I =5.0mA
C
I =100µA
E
C
V
V
h
I =100mA, I =10mA
0.2
1.0
300
V
V
CE(SAT)
BE(SAT)
FE
B
I =100mA, I =10mA
C
B
V
=15V, I =50mA
25
CE
CE
CE
CE
CB
EB
CE
CB
CE
CE
CE
CE
C
f
f
f
C
C
V
V
V
V
V
V
V
V
V
V
V
=15V, I =25mA, f=200MHz
1000
1200
1000
1.0
MHz
MHz
MHz
pF
T
T
T
cb
eb
fe
C
=15V, I =50mA, f=200MHz
2400
C
=15V, I =100mA, f=200MHz
C
=30V, I =0, f=100kHz
2.5
15
350
20
E
=0.5V, I =0, f=100kHz
pF
C
h
=15V, I =50mA, f=1.0kHz
25
2.0
C
rb’C
NF
=15V, I =50mA, f=31.8MHz
ps
c
E
C
C
=15V, I =30mA, f=200MHz (Figure 1)
3.4
dB
dB
dB
dB
NF
=15V, I =35mA, f=200MHz (Figure 2)
8.0
G
G
=15V, I =10mA, f=200MHz (Figure 1)
11.4
pe
pe
C
=15V, I =50mA, f=250MHz (Figure 2)
7.0
C
(SEE REVERSE SIDE)
R0 (1 – October 2001)
CM5943
HIGH FREQUENCY TRANSISTOR
Vc
C9
C10
L3
L4
C3
R1
L2
C3
C11
L1
C5
L5
L2
C14
C13
75 Ohms
INPUT
75 Ohms
OUTPUT
T1
C6
L4
C1
C2
C12
50 Ohms
INPUT
50 Ohms
OUTPUT
R2
R3
C4
C1
C4
L1
L3
C6
C5
C7
C2
C7
C1: 1.0 - 10 pF Johanson 2951 or equivalent
C2, C7: 0.01 µF
C3: 0.5 - 6.0 pF Johanson 4642 or equivalent
C4, C6: 1500 pF
VEE
VCC
C5: 470 pF
C1: 470 pF
C8
L1: 2 turns AWG #26, 5/32" ID
L2: 1µH molded choke
C2: 3.0 - 35 pF
C3, C12: 1.0 - 10 pF
C4, C11: 500 pF
L3: 5 turns AWG #26, 3/32" ID
L4: ferrite, 3 turns #30 on stackpole 57-0156 bead
L5: 2 turns AWG #26, 3/32" ID
C5, C7, C9, C13: 0.1 µF
C6, C8, C10, C14: 0.001 µF
VE
T1: AWG #30 trifilar wound 1-9-9 on stackpole 57-0985, #11 toroid
L1: 2 turns #20 wire, 1/4" ID, 3/16" long
R1: 270 ohms
R2: 18 ohms
R3: 150 ohms
L2: 5 turns #18 wire, 1/4" ID, 5/8" long, tapped 1-3/4 turns from collector
L3, L4: 0.47 µH
Figure 1.
Figure 2.
Narrow-Band Test Circuit
Broad-Band Test Circuit
TO-39 PACKAGE - MECHANICAL OUTLINE
A
B
DIMENSIONS
INCHES
MILLIMETERS
SYMBOL MIN
MAX
0.335 0.370
0.315 0.335
MIN
8.51
8.00
-
MAX
9.40
8.51
1.02
6.60
-
D
E
A (DIA)
B (DIA)
C
C
-
0.040
D
0.240 0.260
6.10
12.70
0.41
E
0.500
-
F (DIA)
0.016 0.021
0.200
0.53
G (DIA)
5.08
2.54
F
J
H
I
0.100
0.028 0.034
0.029 0.045
0.71
0.74
0.86
1.14
G
H
J
LEAD #2
LEAD #1
TO-39 (REV: R1)
LEAD #3
LEAD CODE:
1) Emitter
2) Base
45°
3) Collector
R1
I
R0 (1- October 2001)
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