CMKD6001LEADFREE [CENTRAL]
Rectifier Diode, 3 Element, 0.25A, 100V V(RRM), Silicon, PLASTIC, ULTRAMINI-6;
| 型号： | CMKD6001LEADFREE |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Rectifier Diode, 3 Element, 0.25A, 100V V(RRM), Silicon, PLASTIC, ULTRAMINI-6 二极管 开关 |
| 文件： | 总2页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
CMKD6001
Central
SURFACE MOUNT
Semiconductor Corp.
™
ULTRAmini
TRIPLE ISOLATED
LOW LEAKAGE SILICON
SWITCHING DIODES
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMKD6001
type contains three (3) Isolated Silicon Switching
Diodes, manufactured by the epitaxial planar
™
process, epoxy molded in a ULTRAmini surface
mount package, designed for switching
applications requiring extremely low leakage.
MARKING CODE: K01
SOT-363 CASE
MAXIMUM RATINGS: (T =25°C)
A
SYMBOL
UNITS
V
V
mA
mA
mA
mA
mW
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Forward Surge Current, tp=1 µsec.
Forward Surge Current, tp=1 sec.
Power Dissipation
V
75
100
250
500
4000
1000
250
R
V
RRM
F
I
I
I
I
FRM
FSM
FSM
P
D
Operating and Storage
Junction Temperature
Thermal Resistance
T ,T
stg
-65 to +150
500
°C
°C/W
J
Θ
JA
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
V =75V
MIN
MAX
500
UNITS
pA
V
V
V
V
pF
µs
I
R
R
BV
I =100µA
100
R
R
V
V
V
I =1.0mA
0.85
0.95
1.1
2.0
3.0
F
F
F
F
I =10mA
F
I =100mA
F
C
V =0, f=1 MHz
T
R
t
I =I =10mA, R =100Ω Rec. to 1.0mA
rr
R
F
L
R2 (7-August 2003)
TM
CMKD6001
Central
SURFACE MOUNT
Semiconductor Corp.
™
ULTRAmini
TRIPLE ISOLATED
LOW LEAKAGE SILICON
SWITCHING DIODES
SOT-363 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) ANODE D1
2) ANODE D2
3) ANODE D3
4) CATHODE D3
5) CATHODE D2
6) CATHODE D1
MARKING CODE: K01
R2 (7-August 2003)
相关型号：
CMKD6001TRLEADFREE
Rectifier Diode, 3 Element, 0.25A, 100V V(RRM), Silicon, PLASTIC, ULTRAMINI-6
CENTRAL
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