CMKDM3575BKPBFREE [CENTRAL]
Transistor,;
| 型号： | CMKDM3575BKPBFREE |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Transistor, |
| 文件： | 总2页 (文件大小：711K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
CMKDM3590 N-CH/N-CH
CMKDM7590 P-CH/P-CH
CMKDM3575 N-CH/P-CH
Central
Semiconductor Corp.
DESCRIPTION:
SURFACE MOUNT
These CENTRAL SEMICONDUCTOR devices are
combinations of dual N-Channel and P-Channel
Enhancement-mode silicon MOSFETs designed for high
speed pulsed amplifier and driver applications. These
devices offer desirable MOSFET electrical characteristics
in an economical, industry standard SOT-363 package.
N-CHANNEL AND P-CHANNEL
DUAL ENHANCEMENT-MODE
COMPLEMENTARY MOSFETS
MARKING CODES: CMKDM3590: 3C5
CMKDM7590: 7C5
CMKDM3575: 37C
SOT-363 CASE
• Devices are Halogen Free by design
FEATURES:
• ESD Protection up to 2kV
• Power Dissipation: 350mW
• Low Threshold Voltage
• Logic Level Compatibility
• Small SOT-363 Surface Mount Package
APPLICATIONS:
• Load/Power Switches
• Power Supply Converter Circuits
• Battery Powered Portable Devices
MAXIMUM RATINGS: (T =25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
SYMBOL CMKDM3590
CMKDM7590
UNITS
V
V
mA
mA
mW
°C
A
V
V
I
I
20
8.0
DS
GS
D
D
160
200
140
180
Continuous Drain Current (t < 5s)
p
Power Dissipation
P
350
-65 to +150
357
D
Operating and Storage Junction Temperature
Thermal Resistance
T , T
stg
J
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS: (T =25°C)
CMKDM3590
CMKDM7590
MIN TYP MAX
A
SYMBOL
TEST CONDITIONS
MIN TYP MAX
UNITS
nA
nA
nA
V
V
Ω
Ω
Ω
Ω
Ω
S
pF
pF
pF
ns
ns
I
I
I
, I
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
=5.0V, V =0V
-
-
-
20
-
-
-
-
100
50
100
-
-
-
-
20
-
-
-
-
100
50
100
-
GSSF GSSR
DSS
DSS
GS
DS
DS
GS
DS
=5.0V, V =0V
GS
=16V, V =0V
GS
BV
V
=0V, I =250μA
DSS
GS(th)
D
=V , I =250μA
0.4
-
1.0
3.0
4.0
6.0
10
-
-
-
-
-
0.4
-
1.0
5.0
7.0
10
17
-
-
-
-
-
DS GS
D
D
D
D
D
D
D
r
r
r
r
r
=4.5V, I =100mA
-
-
-
-
-
-
-
-
-
-
-
1.5
2.0
3.0
4.0
7.0
1.3
2.2
9.0
3.0
40
150
-
-
-
-
-
-
-
-
-
-
-
4.0
5.5
8.0
11
20
1.3
1.0
12
2.7
60
210
DS(ON)
DS(ON)
DS(ON)
DS(ON)
DS(ON)
GS
GS
GS
GS
GS
DS
DS
DS
DS
DD
DD
=2.5V, I =50mA
=1.8V, I =20mA
=1.5V, I =10mA
=1.2V, I =1.0mA
g
=5.0V, I =125mA
FS
rss
iss
C
C
C
=15V, V =0V, f=1.0MHz
GS
=15V, V =0V, f=1.0MHz
GS
=15V, V =0V, f=1.0MHz
oss
GS
GS
t
t
=10V, V =4.5V, I =200mA
=10V, V =4.5V, I =200mA
GS
-
-
-
-
on
off
D
D
R0 (26-May 2009)
TM
CMKDM3590 N-CH/N-CH
CMKDM7590 P-CH/P-CH
CMKDM3575 N-CH/P-CH
Central
Semiconductor Corp.
SURFACE MOUNT
N-CHANNEL AND P-CHANNEL
DUAL ENHANCEMENT-MODE
COMPLEMENTARY MOSFETS
SOT-363 CASE - MECHANICAL OUTLINE
PIN CONFIGURATIONS
LEAD CODE:
1) GATE Q1
2) SOURCE Q1
3) DRAIN Q2
4) GATE Q2
5) SOURCE Q2
6) DRAIN Q1
CMKDM3590
CMKDM7590
CMKDM3575
MARKING CODE: 3C5
MARKING CODE: 7C5
MARKING CODE: 37C
R0 (26-May 2009)
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CMKDM7590
Small Signal Field-Effect Transistor, 0.14A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ULTRAMINI-6
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