CMKT2222ATRLEADFREE [CENTRAL]
Transistor;
| 型号： | CMKT2222ATRLEADFREE |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Transistor |
| 文件： | 总2页 (文件大小：492K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CMKT2222A
SURFACE MOUNT
DUAL NPN SMALL SIGNAL
SILICON SWITCHING
TRANSISTORS
www.centralsemi.com
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMKT2222A
consists of two individually isolated 2222A NPN silicon
transistors, manufactured by the epitaxial planar
process and epoxy molded in an SOT-363 surface
mount package. This ULTRAmini™ device has
been designed for small signal general purpose and
switching applications.
MARKING CODE: K22
SOT-363 CASE
MAXIMUM RATINGS: (T =25°C)
Collector-Base Voltage
SYMBOL
UNITS
V
A
V
V
V
75
40
CBO
CEO
EBO
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
6.0
Continuous Collector Current
Power Dissipation
I
600
mA
mW
°C
C
P
350
D
Operating and Storage Junction Temperature
Thermal Resistance
T , T
-65 to +150
357
J
stg
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
I
I
I
I
V
V
V
V
=60V
10
nA
CBO
CBO
CEV
EBO
CB
CB
CE
EB
=60V, T =125°C
10
10
10
μA
nA
nA
V
A
=60V, V =3.0V
EB
=3.0V
BV
BV
BV
I =10μA
75
40
CBO
CEO
C
I =10mA
V
C
I =10μA
6.0
V
EBO
E
V
V
V
V
I =150mA, I =15mA
0.3
1.0
1.2
2.0
V
CE(SAT)
CE(SAT)
BE(SAT)
BE(SAT)
FE
C
B
I =500mA, I =50mA
V
C
B
I =150mA, I =15mA
0.6
V
C
B
I =500mA, I =50mA
V
C
B
h
h
h
h
h
V
=10V, I =0.1mA
35
50
CE
CE
CE
CE
CE
C
V
V
V
V
=10V, I =1.0mA
FE
C
=10V, I =10mA
75
FE
C
=1.0V, I =150mA
50
FE
C
=10V, I =150mA
100
40
300
FE
C
h
V
=10V, I =500mA
FE
CE C
f
V
=20V, I =20mA, f=100MHz
300
MHz
pF
T
CE
C
C
V
=10V, I =0, f=1.0MHz
8.0
25
ob
CB
E
C
V
=0.5V, I =0, f=1.0MHz
pF
ib
EB
C
R4 (13-January 2010)
CMKT2222A
SURFACE MOUNT
DUAL NPN SMALL SIGNAL
SILICON SWITCHING
TRANSISTORS
ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued: (T =25°C)
A
SYMBOL
TEST CONDITIONS
=10V, I =1.0mA, f=1.0kHz
MIN
MAX
UNITS
kΩ
h
V
2.0
8.0
ie
CE
C
h
V
=10V, I =10mA, f=1.0kHz
0.25
1.25
8.0
4.0
300
375
35
kΩ
ie
CE C
h
V
=10V, I =1.0mA, f=1.0kHz
x10-4
x10-4
re
CE C
h
V
=10V, I =10mA, f=1.0kHz
re
CE C
h
V
=10V, I =1.0mA, f=1.0kHz
50
75
5.0
25
fe
CE
V =10V, I =10mA, f=1.0kHz
CE
C
h
fe
C
h
V
=10V, I =1.0mA, f=1.0kHz
μS
μS
ps
dB
ns
ns
ns
ns
oe
CE
C
h
V
=10V, I =10mA, f=1.0kHz
200
150
4.0
10
oe
rb’C
CE
C
V
=10V, I =20mA, f=31.8MHz
c
CB
E
NF
V
=10V, I =100μA, R =1.0kΩ, f=1.0kHz
CE C S
t
V
=30V, V =0.5V, I =150mA, I =15mA
d
CC
C
B1
BE
t
V
=30V, V =0.5V, I =150mA, I =15mA
25
r
CC
C
B1
BE
t
V
=30V, I =150mA, I =I =15mA
225
60
s
CC B1 B2
C
t
V
=30V, I =150mA, I =I =15mA
f
CC B1 B2
C
SOT-363 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter Q1
2) Base Q1
3) Collector Q2
4) Emitter Q2
5) Base Q2
6) Collector Q1
MARKING CODE: K22
R4 (13-January 2010)
www.centralsemi.com
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