CMLD4448DOTR [CENTRAL]
Rectifier Diode, 2 Element, 0.25A, 120V V(RRM), Silicon, PLASTIC, PICOMINI-6;
| 型号： | CMLD4448DOTR |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Rectifier Diode, 2 Element, 0.25A, 120V V(RRM), Silicon, PLASTIC, PICOMINI-6 |
| 文件： | 总1页 (文件大小：172K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CMLD4448DO
CMLD4448DOG
www.centralsemi.com
SURFACE MOUNT SILICON
DUAL, ISOLATED, OPPOSING
HIGH SPEED
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLD4448DO
and CMLD4448DOG each contain two (2) isolated
opposing configuration, silicon switching diodes,
manufactured by the epitaxial planar process, epoxy
molded in an SOT-563 surface mount package. These
devices are designed for high speed
SWITCHING DIODES
switching applications.
MARKING CODES:
CMLD4448DO: C40
CMLD4448DOG: 4CG
SOT-563 CASE
• The CMLD4448DOG is Halogen Free by design
MAXIMUM RATINGS: (T =25°C)
SYMBOL
UNITS
V
A
Peak Repetitive Reverse Voltage
V
120
250
RRM
Continuous Forward Current
I
mA
mA
A
F
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=1.0μs
Peak Forward Surge Current, tp=1.0s
Power Dissipation
I
500
FRM
I
4.0
FSM
I
1.0
A
FSM
P
250
mW
°C
D
Operating and Storage Junction Temperature
Thermal Resistance
T , T
-65 to +150
500
J
stg
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)
A
SYMBOL TEST CONDITIONS
MIN
TYP
MAX
300
100
500
UNITS
nA
μA
nA
V
I
I
I
V =50V
R
R
R
R
V =50V, T =125°C
R
A
V =100V
R
BV
I =100μA
120
0.55
0.67
0.85
150
0.59
0.72
0.91
R
R
V
V
V
I =1.0mA
0.65
0.77
1.0
V
F
F
F
F
I =10mA
V
F
I =100mA
V
F
C
V =0, f=1.0MHz
1.5
pF
ns
J
R
t
I =I =10mA, I =1.0mA, R =100Ω
2.0
4.0
rr
R
F
rr
L
R6 (15-June 2015)
相关型号：
CMLD4448LEADFREE
Rectifier Diode, 2 Element, 0.25A, 120V V(RRM), Silicon, PLASTIC, PICOMINI-6
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CMLD6001DO
SURFACE MOUNT PICOmini⑩ DUAL, ISOLATED, OPPOSING LOW LEAKAGE SILICON SWITCHING DIODES
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