CMLD6263DO_10 [CENTRAL]
SURFACE MOUNT DUAL OPPOSING HIGH VOLTAGE SILICON SCHOTTKY DIODES; 表面贴装双反高压硅肖特基二极管
| 型号： | CMLD6263DO_10 |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | SURFACE MOUNT DUAL OPPOSING HIGH VOLTAGE SILICON SCHOTTKY DIODES |
| 文件： | 总2页 (文件大小：573K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CMLD6263DO
SURFACE MOUNT
DUAL OPPOSING
HIGH VOLTAGE
www.centralsemi.com
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLD6263DO
incorporates two galvanically isolated, High Voltage,
SILICON SCHOTTKY DIODES
low V Silicon Diodes with an opposing Anode/
F
Cathode configuration, in a space saving SOT-563
surface mount package. These diodes are designed
for fast switching applications requiring a low forward
voltage drop.
MARKING CODE: 63O
SOT-563 CASE
FEATURES:
•
•
Low Forward Voltage
Galvanically Isolated
•
Dual Opposing (DO) Schottky Diodes
•
High Voltage (70V)
MAXIMUM RATINGS: (T =25°C)
SYMBOL
UNITS
V
A
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Forward Surge Current, tp=1.0s
Power Dissipation
V
70
15
RRM
I
mA
F
I
50
mA
FSM
P
250
mW
°C
D
Operating and Storage Junction Temperature
Thermal Resistance
T , T
-65 to +150
500
J
stg
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)
A
SYMBOL TEST CONDITIONS
MIN
TYP
MAX
UNITS
nA
I
V =50V
R
98
200
R
BV
I =10μA
70
V
R
R
V
F
I =1.0mA
F
395
410
2.0
5.0
mV
pF
C
V =0, f=1.0MHz
T
R
t
I =I =10mA, I =1.0mA, R =100Ω
ns
rr
R
F
rr
L
R3 (18-January 2010)
CMLD6263DO
SURFACE MOUNT
DUAL OPPOSING
HIGH VOLTAGE
SILICON SCHOTTKY DIODES
SOT-563 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
LEAD CODE:
1) Anode D1
2) NC
3) Cathode D2
4) Anode D2
5) NC
6) Cathode D1
MARKING CODE: 63O
R3 (18-January 2010)
www.centralsemi.com
相关型号：
CMLD6263SLEADFREE
Rectifier Diode, Schottky, 4 Element, 0.015A, 70V V(RRM), Silicon, PICOMINI-6
CENTRAL
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