CMLDM8002AGBKPBFREE [CENTRAL]
Transistor,;
| 型号： | CMLDM8002AGBKPBFREE |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Transistor, |
| 文件： | 总2页 (文件大小：518K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CMLDM8002A
CMLDM8002AG*
CMLDM8002AJ
www.centralsemi.com
SURFACE MOUNT
DUAL P-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
DESCRIPTION:
These CENTRAL SEMICONDUCTOR devices are
dual chip Enhancement-mode P-Channel Field Effect
Transistors, manufactured by the P-Channel DMOS
Process, designed for high speed pulsed amplifier and
driver applications. The CMLDM8002A utilizes the USA
pinout configuration, while the CMLDM8002AJ, utilizing
the Japanese pinout configuration, is available as a
special order. These special Dual Transistor devices
offer Low r
and Low V .
DS(on)
DS(on)
SOT-563 CASE
MARKING CODES: CMLDM8002A:
C08
CMLDM8002AG*: CG8
CMLDM8002AJ: CJ8
Device is Halogen Free by design
*
FEATURES:
• Dual Chip Device
• Fast Switching
• Logic Level Compatible
• Small SOT-563 package
APPLICATIONS:
• Load/Power Switches
• Power Supply Converter Circuits
• Battery Powered Portable Equipment
• Low r
• Low V
DS(on)
DS(on)
• Low Threshold Voltage
MAXIMUM RATINGS: (T =25°C)
SYMBOL
UNITS
A
Drain-Source Voltage
V
50
50
V
V
DS
DG
GS
Drain-Gate Voltage
V
V
Gate-Source Voltage
20
V
Continuous Drain Current
I
280
mA
mA
A
D
Continuous Source Current (Body Diode)
Maximum Pulsed Drain Current
Maximum Pulsed Source Current
Power Dissipation (Note 1)
Power Dissipation (Note 2)
Power Dissipation (Note 3)
Operating and Storage Junction Temperature
Thermal Resistance
I
280
S
I
1.5
DM
I
1.5
A
SM
P
P
P
350
mW
mW
mW
°C
D
D
D
300
150
T , T
-65 to +150
357
J
stg
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
MAX
100
1.0
UNITS
nA
I
I
I
I
, I
V
V
V
V
=20V, V =0
GSSF GSSR
GS
DS
DS
GS
GS
DS
=50V, V =0
GS
μA
DSS
=50V, V =0, T =125°C
500
μA
DSS
GS
J
=10V, V =10V
500
mA
D(ON)
DS
BV
V
V
=0, I =10μA
50
1.0
V
V
DSS
D
V
=V , I =250μA
DS GS
2.5
GS(th)
D
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm2
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm2
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm2
R3 (18-January 2010)
CMLDM8002A
CMLDM8002AG*
CMLDM8002AJ
SURFACE MOUNT
DUAL P-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
MAX
1.5
0.15
1.3
2.5
4.0
UNITS
V
V
V
Ω
Ω
Ω
Ω
mS
pF
pF
pF
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
=10V, I =500mA
DS(ON)
DS(ON)
SD
GS
GS
GS
GS
GS
GS
GS
DS
DS
DS
DS
DD
D
=5.0V, I =50mA
D
=0, I =115mA
S
r
r
r
r
=10V, I =500mA
DS(ON)
DS(ON)
DS(ON)
DS(ON)
FS
rss
iss
D
=10V, I =500mA, T =125°C
D
J
=5.0V, I =50mA
3.0
5.0
D
=5.0V, I =50mA, T =125°C
D
J
g
=10V, I =200mA
200
D
C
C
C
=25V, V =0, f=1.0MHz
GS
7.0
70
15
=25V, V =0, f=1.0MHz
GS
=25V, V =0, f=1.0MHz
GS
oss
/ t
t
=30V, V =10V, I =200mA
on off
GS
D
R =25Ω, R =150Ω
20
ns
G
L
SOT-563 CASE - MECHANICAL OUTLINE
CMLDM8002A (USA Pinout)
CMLDM8002AJ (Japanese Pinout)
CMLDM8002AG*
LEAD CODE:
LEAD CODE:
1) Gate Q1
2) Source Q1
3) Drain Q2
4) Gate Q2
5) Source Q2
6) Drain Q1
1) Gate Q1
2) Source Q1
3) Drain Q2
4) Gate Q2
5) Source Q2
6) Drain Q1
MARKING CODES:
CMLDM8002A: C08
MARKING CODE: CJ8
CMLDM8002AG*: CG8
Device is Halogen Free by design
*
R3 (18-January 2010)
www.centralsemi.com
相关型号：
CMLDM8002ALEADFREE
Small Signal Field-Effect Transistor, 0.00028A I(D), 50V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PICO MINI-6
CENTRAL
CMLDM8005TR
Small Signal Field-Effect Transistor, 0.65A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MINIATURE PACKAGE-6
CENTRAL
©2020 ICPDF网 联系我们和版权申明