CMLDM8120BK [CENTRAL]
Small Signal Field-Effect Transistor, 0.86A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PICOMINI-6;
| 型号： | CMLDM8120BK |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Small Signal Field-Effect Transistor, 0.86A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PICOMINI-6 开关 光电二极管 晶体管 |
| 文件： | 总2页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
CMLDM8120
Central
CMLDM8120G*
Semiconductor Corp.
TM
SURFACE MOUNT PICOmini
P-CHANNEL
DESCRIPTION:
These CENTRAL SEMICONDUCTOR devices are
Enhancement-mode P-Channel Field Effect Transistors,
manufactured by the P-Channel DMOS Process,
designed for high speed pulsed amplifier and driver
ENHANCEMENT-MODE
SILICON MOSFET
applications. These MOSFETs offer Low r
Low Threshold Voltage.
and
DS(on)
MARKING CODES: CMLDM8120:
CMLDM8120G*:
C81
C8G
SOT-563 CASE
Device is Halogen Free by design
*
FEATURES:
APPLICATIONS:
• Load/Power Switches
• Power Supply Converter Circuits
• Battery Powered Portable Equipment
• Low r
DS(on)
• Low Threshold Voltage
• Logic Level Compatible
• Small SOT-563 package
MAXIMUM RATINGS: (T =25°C)
SYMBOL
UNITS
V
V
mA
mA
mA
A
A
Drain-Source Voltage
V
V
I
I
I
20
8.0
860
950
360
4.0
4.0
350
300
DS
GS
D
D
S
Gate-Source Voltage
Continuous Drain Current (Steady State)
Continuous Drain Current (t≤5s)
Continuous Source Current (Body Diode)
Maximum Pulsed Drain Current (tp=10μs)
Maximum Pulsed Source Current (tp=10μs)
Power Dissipation (Note 1)
Power Dissipation (Note 2)
Power Dissipation (Note 3)
Operating and Storage Junction Temperature
Thermal Resistance
I
I
DM
SM
A
P
P
P
mW
mW
mW
°C
D
D
D
150
T , T
stg
-65 to +150
357
J
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
TYP
1.0
5.0
24
0.76
MAX
UNITS
I
I
, I
V
V
V
V
V
V
V
V
V
=8.0V, V =0V
=20V, V =0V
GS
=0V, I =250μA
=V , I =250μA
=0V, I =360mA
=4.5V, I =0.95A
=4.5V, I =0.77A
50
nA
GSSF GSSR
DSS
DSS
GS(th)
SD
GS
DS
GS
DS
500
nA
V
V
BV
V
V
20
0.45
D
1.0
0.9
0.15
0.142
0.20
0.24
DS GS
D
V
GS
GS
GS
GS
GS
S
r
r
r
r
0.085
0.085
0.13
Ω
Ω
Ω
Ω
DS(ON)
DS(ON)
DS(ON)
DS(ON)
D
D
D
D
=2.5V, I =0.67A
=1.8V, I =0.20A
0.19
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0 mm2
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0 mm2
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4 mm2
R2 (8-January 2009)
TM
CMLDM8120
Central
CMLDM8120G*
Semiconductor Corp.
TM
SURFACE MOUNT PICOmini
P-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
ELECTRICAL CHARACTERISTICS - Continued: (T =25°C unless otherwise noted)
A
SYMBOL
FS
TEST CONDITIONS
MIN
2.0
TYP
MAX
UNITS
g
V
V
V
V
V
V
=10V, I =0.81A
S
DS
DS
DS
DS
DD
DD
D
C
C
C
=16V, V =0, f=1.0MHz
GS
80
200
60
20
25
pF
pF
pF
ns
ns
rss
iss
oss
=16V, V =0, f=1.0MHz
GS
=16V, V =0, f=1.0MHz
GS
t
t
=10V, V =4.5V, I =0.95A, R =6Ω
=10V, V =4.5V, I =0.95A, R =6Ω
on
off
GS
GS
D
D
G
G
SOT-563 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
LEAD CODE:
1) DRAIN
2) DRAIN
3) GATE
4) SOURCE
5) DRAIN
6) DRAIN
MARKING CODES: CMLDM8120: C81
CMLDM8120G*: C8G
Device is Halogen Free by design
*
R2 (8-January 2009)
相关型号：
CMLDM8120BKLEADFREE
Small Signal Field-Effect Transistor, 0.86A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-563, 6 PIN
CENTRAL
CMLDM8120GTR
Small Signal Field-Effect Transistor, 0.86A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PICOMINI-6
CENTRAL
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