CMLT2207GTR [CENTRAL]
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 2-Element, NPN and PNP, Silicon, PLASTIC, PICOMINI-6;
| 型号： | CMLT2207GTR |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 2-Element, NPN and PNP, Silicon, PLASTIC, PICOMINI-6 开关 光电二极管 晶体管 |
| 文件： | 总2页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
CMLT2207
Central
CMLT2207G
Semiconductor Corp.
SURFACE MOUNT
TM
DESCRIPTION:
PICOmini
The CENTRAL SEMICONDUCTOR CMLT2207 and
CMLT2207G each consist of one isolated 2N2222A
NPN transistor and one complementary isolated
2N2907A PNP transistor, manufactured by the
epitaxial planar process and epoxy molded in an
SOT-563 surface mount package. This PICOmini™
device has been designed for small signal general
purpose amplifier and switching applications.
DUAL, COMPLEMENTARY
SILICON TRANSISTORS
The CMLT2207G is Halogen Free by design.
•
SOT-563 CASE
MARKING CODES:
CMLT2207: L70
CMLT2207G: L7G
MAXIMUM RATINGS: (T =25°C)
SYMBOL
NPN (Q1)
PNP (Q2)
UNITS
V
V
A
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
V
V
V
75
40
6.0
60
60
5.0
CBO
CEO
EBO
C
P
D
V
I
600
350
mA
mW
°C
Operating and Storage Junction Temperature
Thermal Resistance
T , T
stg
-65 to +150
357
J
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)
A
NPN (Q1)
PNP (Q2)
SYMBOL
TEST CONDITIONS
MIN MAX
MIN MAX
UNITS
nA
nA
nA
nA
nA
nA
nA
V
V
V
V
V
I
I
I
I
I
I
I
V
V
V
V
V
V
V
=60V
=50V
=60V, T =125°C
=50V, T =125°C
=3.0V
=60V, V
=30V, V
-
-
-
10
-
10
-
-
-
-
-
10
-
CBO
CBO
CBO
CBO
EBO
CEV
CEV
CBO
CEO
EBO
CE(SAT)
CE(SAT)
BE(SAT)
BE(SAT)
FE
FE
FE
CB
CB
CB
CB
EB
CE
CE
A
A
-
-
-
-
10
-
-
-
-
-
10
10
-
=3.0V
=500mV
EB(OFF)
EB(OFF)
-
50
-
-
BV
BV
BV
V
V
V
V
h
h
h
h
h
I =10μA
75
40
6.0
-
-
-
-
60
60
5.0
-
-
-
C
I =10mA
C
I =10μA
-
E
I =150mA, I =15mA
0.3
1.0
1.2
2.0
-
-
-
0.4
1.6
1.3
2.6
-
-
-
C
B
B
B
B
C
C
C
C
I =500mA, I =50mA
-
C
I =150mA, I =15mA
0.6
-
35
50
75
V
V
C
I =500mA, I =50mA
-
C
V
=10V, I =0.1mA
=10V, I =1.0mA
=10V, I =10mA
=10V, I =150mA
=1.0V, I =150mA
=10V, I =500mA
75
100
100
CE
CE
CE
CE
CE
V
V
V
V
100 300
100 300
FE
FE
50
40
-
-
-
-
-
C
h
V
50
FE
CE
C
R2 (6-June 2008)
CMLT2207
CMLT2207G
TM
SURFACE MOUNT
TM
PICOmini
Central
DUAL, COMPLEMENTARY
SILICON TRANSISTORS
Semiconductor Corp.
ELECTRICAL CHARACTERISTICS - Continued:
NPN (Q1)
PNP (Q2)
SYMBOL
TEST CONDITIONS
MIN MAX
MIN MAX
UNITS
MHz
MHz
pF
pF
pF
kΩ
kΩ
x10-4
x10-4
f
V
=20V, I =20mA, f=100MHz
300
-
-
-
-
-
-
8.0
25
-
-
-
-
T
CE
C
C
E
C
C
C
C
C
C
C
C
C
C
E
C
f
V
=20V, I =50mA, f=100MHz
200
T
C
V
=10V, I =0, f=1.0MHz
-
-
-
-
-
-
-
-
-
-
-
-
8.0
ob
ib
ib
ie
ie
re
re
fe
C
C
h
h
h
h
h
h
30
-
-
-
-
-
-
-
-
2.0
0.25
-
8.0
1.25
8.0
4.0
300
375
35
200
150
4.0
-
10
25
-
225
-
-
50
75
5.0
25
fe
oe
h
h
μS
μS
ps
dB
ns
ns
ns
ns
ns
ns
ns
ns
oe
rb'C
-
-
c
NF
-
-
-
-
-
-
-
-
-
S
C
C
C
t
-
-
-
-
-
-
-
-
45
10
40
100
-
80
-
on
t
d
t
r
t
off
C B1 B2
C
C
C
t
V
=30V, I =150mA, I =I =15mA
=6.0V, I =150mA, I =I =15mA
=30V, I =150mA, I =I =15mA
s
CC B1 B2
t
V
V
s
CC B1 B2
t
60
-
f
CC B1 B2
t
V
=6.0V, I =150mA, I =I =15mA
30
f
CC B1 B2
C
SOT-563 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) EMITTER Q1
MARKING CODES:
CMLT2207: L70
CMLT2207G: L7G
2) BASE Q1
3) COLLECTOR Q2
4) EMITTER Q2
5) BASE Q2
6) COLLECTOR Q1
R2 (6-June 2008)
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