CMPD1001A [CENTRAL]
HIGH CURRENT SWITCHING DIODE; 大电流开关二极管
| 型号： | CMPD1001A |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | HIGH CURRENT SWITCHING DIODE |
| 文件： | 总2页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
CMPD1001
CMPD1001A
CMPD1001S
Ce n t r a l
S e m ic o n d u c t o r Co r p .
HIGH CURRENT
SWITCHING DIODE
DESCRIPTION:
The
CENTRAL
SEMICONDUCTOR
CMPD1001 series types are silicon switching
diodes manufactured by the epitaxial planar
process, designed for applications requiring
high current capability.
SOT-23 CASE
The following configurations are available:
CMPD1001
CMPD1001S
CMPD1001A
SINGLE
DUAL, IN SERIES
DUAL, COMMON ANODE
MARKING CODE: L20
MARKING CODE: L21
MARKING CODE: L22
o
MAXIMUM RATINGS (T =25 C)
A
SYMBOL
UNITS
Continuous Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Peak Repetitive Reverse Current
Forward Surge Current, tp=1 µs
Forward Surge Current, tp=1 s
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
V
90
250
600
600
6000
1000
350
V
mA
mA
mA
mA
mA
mW
R
I
I
I
I
I
P
F
FRM
RRM
FSM
FSM
D
o
o
T ,T
-65 to +150
357
C
J stg
Θ
C/W
JA
o
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
90
MAX
UNIT
V
nA
µA
V
B
I =100 µA
VR
R
I
I
V =90V
100
100
0.75
R
R
R
o
V =90V, T =150 C
R
A
V
I =10mA
F
F
130
SYMBOL
TEST CONDITIONS
MIN
MAX
0.84
0.90
1.00
1.25
35
UNIT
V
V
V
F
V
V
F
C
t
I =50mA
F
F
I =100mA
F
V
V
V
pF
ns
I =200mA
F
F
I =400mA
F
V =0, f=1 MHz
T
R
I =I =30mA, RECOV. TO 3.0mA, R =100Ω
50
rr
F R
L
All dimensions in inches (mm).
NO
A2
C1
C1
A
C2
CONNECTION
A1, A2
A1, C2
C
CMPD1001
CMPD1001S
CMPD1001A
R2
131
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