CMPD2003SLEADFREE [CENTRAL]
Rectifier Diode, 2 Element, 0.25A, 250V V(RRM), Silicon, SOT-23, 3 PIN;
| 型号： | CMPD2003SLEADFREE |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Rectifier Diode, 2 Element, 0.25A, 250V V(RRM), Silicon, SOT-23, 3 PIN 整流二极管 开关 光电二极管 高压 |
| 文件： | 总2页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
CMPD2003
CMPD2004
CMPD2004S
Ce n t r a l
S e m ic o n d u c t o r Co r p .
HIGH VOLTAGE
SWITCHING DIODE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CMPD2003, CMPD2004, CMPD2004S types
are silicon switching diodes manufactured by
the epitaxial planar process, designed for
applications requiring high voltage capability.
SOT-23 CASE
The following configurations are available:
CMPD2003
CMPD2004
CMPD2004S
SINGLE
SINGLE
DUAL, IN SERIES
MARKING CODE: A82
MARKING CODE: D53
MARKING CODE: DB6
o
MAXIMUM RATINGS (T =25 C)
A
CMPD2004
SYMBOL
CMPD2003
200
CMPD2004S
240
UNITS
V
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Peak Repetitive Reverse Current
Continuous Forward Current
Peak Repetitive Forward Current
Forward Surge Current, tp=1 µs
Forward Surge Current, tp=1 s
Power Dissipation
V
V
R
RRM
250
200
250
625
4000
1000
300
200
225
625
4000
1000
V
I
I
I
I
I
P
mA
mA
mA
mA
mA
mW
O
F
FRM
FSM
FSM
350
D
Operating and Storage
Junction Temperature
Thermal Resistance
o
o
T ,T
-65 to +150
357
C
C/W
J stg
Θ
JA
o
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)
A
CMPD2004
CMPD2004S
CMPD2003
SYMBOL
TEST CONDITIONS
MIN
250
MAX
MIN
300
MAX
UNIT
V
B
I =100 µA
VR
R
I
I
I
I
V =200V
100
100
-
-
-
nA
µA
nA
µA
V
R
R
R
R
R
o
V =200V, T =150 C
R
A
V =240V
100
100
1.0
R
o
V =240V, T =150 C
-
R
A
V
I =100mA
1.0
F
F
132
CMPD2004
CMPD2003
MIN MAX
CMPD2004S
SYMBOL
TEST CONDITIONS
MIN
MAX
-
UNIT
V
pF
V
C
T
t
I =200mA
1.25
5.0
F
F
V =0, f=1 MHz
R
5.0
I =I =30mA, RECOV. TO 3.0mA,
rr
F R
R =100Ω
50
50
ns
L
All dimensions in inches (mm).
NO
CONNECTION
A
A2
C1
C
A1, C2
CMPD2003
CMPD2004
CMPD2004S
R2
133
相关型号：
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