CMPD2005STR [CENTRAL]
Rectifier Diode, 2 Element, 0.225A, 350V V(RRM), Silicon, PLASTIC PACKAGE-3;
| 型号： | CMPD2005STR |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Rectifier Diode, 2 Element, 0.225A, 350V V(RRM), Silicon, PLASTIC PACKAGE-3 光电二极管 |
| 文件： | 总2页 (文件大小：392K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CMPD2005S
CMPD2005SG*
www.centralsemi.com
SURFACE MOUNT
DUAL, IN SERIES
HIGH VOLTAGE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPD2005S
and CMPD2005SG each contain two (2) High Voltage
Silicon Switching Diodes, manufactured by the epitaxial
planar process, epoxy molded in a SOT-23 surface
mount package, designed for applications requiring
high voltage capability.
SILICON SWITCHING DIODES
MARKING CODES:
CMPD2005S:
DB5
CMPD2005SG*: 5SG
SOT-23 CASE
Device is Halogen Free by design
*
MAXIMUM RATINGS: (T =25°C)
SYMBOL
UNITS
V
A
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Average Forward Current
V
300
350
R
V
V
RRM
I
200
mA
mA
mA
A
O
Continuous Forward Current
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=1.0μs
Peak Forward Surge Current, tp=1.0s
Power Dissipation
I
225
F
I
625
FRM
I
4.0
FSM
FSM
I
1.0
A
P
350
mW
°C
D
Operating and Storage Junction Temperature
Thermal Resistance
T , T
-65 to +150
357
J
stg
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
V =280V
MIN
MAX
100
UNITS
nA
μA
V
I
I
R
R
R
V =280V, T =150°C
100
R
A
BV
I =100μA
350
R
R
V
V
V
I =20mA
0.87
1.0
V
F
F
F
F
I =100mA
V
F
I =200mA
1.25
5.0
V
F
C
V =0, f=1.0MHz
pF
ns
T
R
t
I =I =30mA, Rec. to 3.0mA, R =100Ω
50
rr
R
F
L
R3 (25-January 2010)
CMPD2005S
CMPD2005SG*
SURFACE MOUNT
DUAL, IN SERIES
HIGH VOLTAGE
SILICON SWITCHING DIODES
SOT-23 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
LEAD CODE:
1) Anode D2
2) Cathode D1
3) Anode D1, Cathode D2
MARKING CODES:
CMPD2005S:
DB5
CMPD2005SG*: 5SG
Device is Halogen Free by design
*
R3 (25-January 2010)
www.centralsemi.com
相关型号：
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