CMPD2836ETRPBFREE [CENTRAL]
Rectifier Diode, 0.2A, 120V V(RRM),;
| 型号： | CMPD2836ETRPBFREE |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Rectifier Diode, 0.2A, 120V V(RRM), 二极管 |
| 文件： | 总2页 (文件大小：530K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CMPD2836E
CMPD2838E
www.centralsemi.com
ENHANCED SPECIFICATION
SURFACE MOUNT
DESCRIPTION:
DUAL, SILICON
SWITCHING DIODES
The CENTRAL SEMICONDUCTOR CMPD2836E and
CMPD2838E are Enhanced versions of the CMPD2836
and CMPD2838 High Speed Switching Diodes.
These devices are manufactured by the epitaxial
planar process, in an epoxy molded surface mount
SOT-23 package, designed for high speed switching
applications.
FEATURED ENHANCED SPECIFICATIONS:
♦ BV from 75V min to 120V min.
R
SOT-23 CASE
♦ V from 1.2V max to 1.0V max.
F
The following configurations are available:
CMPD2836E
CMPD2838E
DUAL, COMMON ANODE
DUAL, COMMON CATHODE
MARKING CODE: CA2E
MARKING CODE: CA6E
MAXIMUM RATINGS: (T =25°C)
SYMBOL
UNITS
V
A
♦ Peak Repetitive Reverse Voltage
V
120
200
RRM
Average Forward Current
I
mA
O
Peak Forward Current, tp=1.0s
Power Dissipation
I
300
mA
FM
P
350
mW
°C
D
Operating and Storage Junction Temperature
Thermal Resistance
T , T
-65 to +150
357
J
stg
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)
A
SYMBOL TEST CONDITIONS
MIN
TYP
MAX
100
UNITS
nA
V
♦
♦
♦
♦
♦
I
V =80V
R
R
BV
I =100µA
120
150
0.72
0.84
0.92
1.5
R
R
V
V
V
I =10mA
0.85
0.95
1.0
V
F
F
F
F
I =50mA
V
F
I =100mA
V
F
C
V =0, f=1.0MHz
4.0
pF
ns
T
R
t
I =I =10mA, R =100Ω, Rec. to 1.0mA
4.0
rr
R
F
L
♦ Enhanced specification
R3 (25-January 2010)
CMPD2836E
CMPD2838E
ENHANCED SPECIFICATION
SURFACE MOUNT
DUAL, SILICON
SWITCHING DIODES
SOT-23 CASE - MECHANICAL OUTLINE
PIN CONFIGURATIONS
CMPD2836E
CMPD2838E
LEAD CODE:
1) Cathode D2
2) Cathode D1
3) Anode D1, D2
LEAD CODE:
1) Anode D2
2) Anode D1
3) Cathode D1, D2
MARKING CODE: CA2E
MARKING CODE: CA6E
R3 (25-January 2010)
www.centralsemi.com
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