CMPDM203NHTR [CENTRAL]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,;
| 型号： | CMPDM203NHTR |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
| 文件： | 总2页 (文件大小：343K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CMPDM303NH
SURFACE MOUNT
N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
www.centralsemi.com
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPDM303NH
is a High Current N-Channel Enhancement-mode
Silicon MOSFET, manufactured by the N-Channel
DMOS Process, and is designed for high speed pulsed
amplifier and driver applications. This MOSFET offers
High Current, Low r
and Low Leakage Current.
, Low Threshold Voltage,
DS(ON)
MARKING CODE: 303C
SOT-23F CASE
FEATURES:
APPLICATIONS:
Low r
(0.078Ω MAX @ V =2.5V)
GS
•
Load/Power switches
DS(ON)
•
•
•
Power supply converter circuits
Battery powered portable equipment
High current (I =3.6A)
Logic level compatibility
•
•
D
MAXIMUM RATINGS: (T =25°C)
Drain-Source Voltage
SYMBOL
UNITS
V
A
V
30
12
DS
Gate-Source Voltage
V
V
A
GS
Continuous Drain Current (Steady State)
Maximum Pulsed Drain Current, tp=10μs
Power Dissipation
I
3.6
D
I
14.4
A
DM
P
350
mW
°C
D
Operating and Storage Junction Temperature
Thermal Resistance
T , T
-55 to +150
357
J
stg
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
I
, I
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
=12V, V =0
10
μA
GSSF GSSR
GS
DS
GS
DS
I
=20V, V =0
GS
1.0
μA
V
DSS
BV
=0, I =250μA
30
DSS
GS(th)
D
V
=V , I =250μA
0.6
1.2
0.04
0.078
V
GS DS
D
r
r
=4.5V, I =1.8A
0.027
0.039
11.8
45
Ω
DS(ON)
DS(ON)
GS
GS
DS
DS
DS
DS
DD
DD
DD
DD
DD
D
=2.5V, I =1.8A
Ω
D
g
=5.0V, I =3.6A
S
FS
D
C
C
C
=10V, V =0, f=1.0MHz
pF
pF
pF
nC
nC
nC
ns
ns
rss
iss
GS
=10V, V =0, f=1.0MHz
GS
373
68
=10V, V =0, f=1.0MHz
oss
GS
Q
Q
Q
=10V, V =4.5V, I =3.6A
GS
8.8
13
1.4
2.7
g(tot)
gs
D
=10V, V =4.5V, I =3.6A
0.9
GS
D
=10V, V =4.5V, I =3.6A
1.8
gd
GS
D
t
t
=10V, I =3.6A, R =10Ω
8.7
on
off
D
G
=10V, I =3.6A, R =10Ω
29.1
D
G
R0 (20-October 2010)
CMPDM303NH
SURFACE MOUNT
N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
SOT-23F CASE - MECHANICAL OUTLINE
2
1
3
PIN CONFIGURATION
LEAD CODE:
1) Gate
2) Source
3) Drain
MARKING CODE: 303C
R0 (20-October 2010)
www.centralsemi.com
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