CMPSH-3CE [CENTRAL]

ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODES; 增强型规格表面贴装硅肖特基二极管
CMPSH-3CE
型号: CMPSH-3CE
厂家: CENTRAL SEMICONDUCTOR CORP    CENTRAL SEMICONDUCTOR CORP
描述:

ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODES
增强型规格表面贴装硅肖特基二极管

肖特基二极管
文件: 总2页 (文件大小:129K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TM  
CMPSH-3E  
CMPSH-3AE  
CMPSH-3CE  
CMPSH-3SE  
Central  
Semiconductor Corp.  
ENHANCED SPECIFICATION  
SURFACE MOUNT  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMPSH-3E  
Series types are Enhanced Versions of the  
CMPSH-3 Series of Silicon Schottky Diodes in an  
SOT-23 Surface Mount Package.  
SILICON SCHOTTKY DIODES  
FEATURED ENHANCED SPECIFICATIONS:  
I from 100mA max to 200mA max.  
F
BV from 30V min to 40V min.  
R
SOT-23 CASE  
V from 1.0V max to 0.8V max.  
F
CMPSH-3E:  
SINGLE  
MARKING CODE: D95E  
MARKING CODE: DB1E  
MARKING CODE: DB2E  
MARKING CODE: DA5E  
CMPSH-3AE: DUAL, COMMON ANODE  
CMPSH-3CE: DUAL, COMMON CATHODE  
CMPSH-3SE: DUAL, IN SERIES  
MAXIMUM RATINGS: (T =25°C)  
A
SYMBOL  
UNITS  
V
mA  
mA  
mA  
mW  
Peak Repetitive Reverse Voltage  
Continuous Forward Current  
Peak Repetitive Forward Voltage  
Forward Surge Current, tp=10ms  
Power Dissipation  
V
40  
RRM  
I
200  
350  
750  
350  
F
I
I
FRM  
FSM  
P
D
Operating and Storage  
Junction Temperature  
Thermal Resistance  
T , T  
stg  
-65 to +150  
357  
°C  
°C/W  
J
Θ
JA  
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
BV  
R
I =100µA  
40  
50  
0.29  
0.37  
0.61  
0.65  
90  
V
V
V
V
V
nA  
µA  
pF  
ns  
R
V
V
V
I =2.0mA  
0.33  
0.42  
0.80  
1.0  
500  
100  
F
F
F
F
F
I =15mA  
F
I =100mA  
F
♦♦V  
I =200mA  
F
I
I
V =25V  
R
R
V =25V, T =100°C  
25  
7.0  
R
R
A
C
V =1.0V, f=1 MHz  
T
R
t
I =I =10mA, I =1.0mA, R =100Ω  
rr  
5.0  
rr  
F
R
L
Enhanced specification.  
♦♦ Additional Enhanced specification.  
R2 (6-August 2003)  
CMPSH-3E  
TM  
CMPSH-3AE  
CMPSH-3CE  
CMPSH-3SE  
Central  
Semiconductor Corp.  
ENHANCED SPECIFICATION  
SURFACE MOUNT  
SILICON SCHOTTKY DIODES  
SOT-23 CASE - MECHANICAL OUTLINE  
2
1
2
1
2
1
2
1
D1  
D2  
D1  
D2  
D1  
D2  
3
3
3
3
LEAD CODE:  
LEAD CODE:  
LEAD CODE:  
LEAD CODE:  
CMPSH-3E  
CMPSH-3AE  
1) Cathode D2  
2) Cathode D1  
CMPSH-3CE  
1) Anode D2  
2) Anode D1  
CMPSH-3SE  
1) Anode D2  
2) Cathode D1  
1) Anode  
2) No Connection  
3) Cathode  
3) Anode D1, Anode D2  
3) Cathode D1, Cathode D2 3) Anode D1, Cathode D2  
MARKING  
MARKING  
MARKING  
MARKING  
CODE: D95E  
CODE: DB1E  
CODE: DB2E  
CODE: DA5E  
R2 (6-August 2003)  

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