CMPT3410TRLEADFREE [CENTRAL]
Transistor;
| 型号： | CMPT3410TRLEADFREE |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Transistor |
| 文件： | 总2页 (文件大小：388K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CMPT3410
www.centralsemi.com
SURFACE MOUNT
LOW V
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT3410 type is
a NPN Low V silicon transistor manufactured
by the epitaxial planar process and epoxy molded in
an SOT-23 surface mount package. This device is
designed for battery driven, handheld devices requiring
CE(SAT)
NPN SILICON TRANSISTOR
CE(SAT)
high current and Low V
.
CE(SAT)
MARKING CODE: C341
SOT-23 CASE
MAXIMUM RATINGS: (T =25°C)
Collector-Base Voltage
SYMBOL
UNITS
V
A
V
V
V
40
25
CBO
CEO
EBO
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
6.0
Continuous Collector Current
Peak Collector Current
I
1.0
A
C
I
1.5
A
CM
Power Dissipation
P
350
mW
°C
D
Operating and Storage Junction Temperature
Thermal Resistance
T , T
-65 to +150
357
J
stg
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
I
V
=40V
100
nA
CBO
EBO
CB
EB
I
V
=6.0V
100
nA
V
BV
BV
BV
I =100μA
40
25
CBO
CEO
C
I =10mA
V
C
I =100μA
6.0
V
EBO
E
V
V
V
V
V
V
V
V
I =50mA, I =5.0mA
25
40
50
75
mV
mV
mV
mV
mV
mV
V
CE(SAT)
CE(SAT)
CE(SAT)
CE(SAT)
CE(SAT)
CE(SAT)
BE(SAT)
BE(ON)
FE
C
B
I =100mA, I =10mA
C
B
I =200mA, I =20mA
80
150
250
400
450
1.1
0.9
C
B
I =500mA, I =50mA
190
290
360
C
B
I =800mA, I =80mA
C
B
I =1.0A, I =100mA
C
B
I =800mA, I =80mA
C
B
V
=1.0V, I =10mA
V
CE
CE
CE
CE
CE
CE
CB
C
h
h
h
h
V
V
V
V
V
V
=1.0V, I =10mA
100
100
100
50
C
=1.0V, I =100mA
300
FE
C
=1.0V, I =500mA
FE
C
=1.0V, I =1.0A
FE
C
f
=10V, I =50mA, f=100MHz
100
MHz
pF
T
C
C
=10V, I =0, f=1.0MHz
6.0
10
ob
E
R2 (1-August 2011)
CMPT3410
SURFACE MOUNT
LOW V
CE(SAT)
NPN SILICON TRANSISTOR
SOT-23 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Emitter
3) Collector
MARKING CODE: C341
R2 (1-August 2011)
www.centralsemi.com
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