CMPT3904GTR [CENTRAL]
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3;
| 型号： | CMPT3904GTR |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3 开关 光电二极管 晶体管 |
| 文件： | 总2页 (文件大小：120K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
Central
CMPT3904 CMPT3904G* NPN
CMPT3906 CMPT3906G* PNP
Semiconductor Corp.
COMPLEMENTARY
SILICON TRANSISTORS
DESCRIPTION:
These CENTRAL SEMICONDUCTOR devices are
complementary silicon transistors manufactured by
the epitaxial planar process, epoxy molded in a
surface mount package, designed for small signal
general purpose amplifier and switching applications.
MARKING CODES: CMPT3904:
CMPT3906:
C1A
C2A
CMPT3904G*: CG1
CMPT3906G*: CG2
SOT-23 CASE
Device is Halogen Free by design
*
CMPT3904
CMPT3906
MAXIMUM RATINGS: (T =25°C)
SYMBOL
CMPT3904G* CMPT3906G*
UNITS
A
Collector-Base Voltage
V
V
V
60
40
40
40
V
CBO
CEO
EBO
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
6.0
5.0
Continuous Collector Current
Power Dissipation
I
200
350
mA
mW
°C
C
P
D
Operating and Storage Junction Temperature
Thermal Resistance
T , T
stg
Θ
-65 to +150
357
J
°C/W
JA
CMPT3904
CMPT3906
ELECTRICAL CHARACTERISTICS: (T =25°C)
CMPT3904G*
CMPT3906G*
A
SYMBOL
TEST CONDITIONS
MIN
-
MAX
50
MIN
-
MAX
50
UNITS
nA
I
I
V
V
=30V, V =3.0V
CEV
CE
EB
=30V, V =3.0V
EB
-
60
40
6.0
-
50
-
40
40
5.0
-
50
nA
V
BL
CE
BV
BV
BV
I =10μA
-
-
CBO
CEO
C
I =1.0mA
-
-
V
C
I =10μA
-
0.20
0.30
0.85
0.95
-
-
0.25
0.40
0.85
0.95
-
V
EBO
E
V
V
V
V
I =10mA, I =1.0mA
V
CE(SAT)
CE(SAT)
BE(SAT)
BE(SAT)
FE
C
B
I =50mA, I =5.0mA
-
-
V
C
B
I =10mA, I =1.0mA
0.65
-
0.65
-
V
C
B
I =50mA, I =5.0mA
V
C
B
h
h
h
h
h
V
=1.0V, I =0.1mA
40
70
100
60
30
60
80
100
60
30
CE
CE
CE
CE
CE
C
V
V
V
V
=1.0V, I =1.0mA
-
-
FE
C
=1.0V, I =10mA
300
-
300
-
FE
C
=1.0V, I =50mA
FE
C
=1.0V, I =100mA
-
-
FE
C
R6 (23-January 2009)
TM
CMPT3904 CMPT3904G* NPN
CMPT3906 CMPT3906G* PNP
Central
Semiconductor Corp.
COMPLEMENTARY
SILICON TRANSISTORS
CMPT3904
CMPT3906
ELECTRICAL CHARACTERISTICS Continued: (T =25°C)
CMPT3904G*
CMPT3906G*
A
SYMBOL
TEST CONDITIONS
MIN
300
MAX
-
MIN
250
MAX
-
UNITS
MHz
f
V
V
V
V
V
V
V
V
=20V, I =10mA, f=100MHz
T
CE
CB
BE
CE
CE
CE
CE
CE
C
C
=5.0V, I =0, f=1.0MHz
-
-
4.0
8.0
10
-
-
4.5
10
pF
pF
ob
ib
E
C
=0.5V, I =0, f=1.0MHz
C
h
h
h
h
=10V, I =1.0mA, f=1.0kHz
1.0
0.5
100
1.0
-
2.0
0.1
100
3.0
-
12
kΩ
ie
C
-4
=10V, I =1.0mA, f=1.0kHz
8.0
400
40
10
x10
re
fe
C
=10V, I =1.0mA, f=1.0kHz
400
60
C
=10V, I =1.0mA, f=1.0kHz
μS
dB
oe
C
NF
=5.0V, I =100μA, R =1.0kΩ
5.0
4.0
C
S
f=10Hz to 15.7kHz
t
t
t
t
V
V
V
V
=3.0V, V =0.5, I =10mA, I =1.0mA
-
-
-
-
35
35
-
-
-
-
35
35
ns
ns
ns
ns
d
r
CC
CC
CC
CC
BE
C
B1
B1
=3.0V, I =10mA, I =I =1.0mA
=3.0V, V =0.5, I =10mA, I =1.0mA
BE
C
200
50
225
75
s
f
C
B1 B2
=3.0V, I =10mA, I =I =1.0mA
C
B1 B2
SOT-23 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
MARKING CODES: CMPT3904:
CMPT3906:
C1A
C2A
CMPT3904G*: CG1
CMPT3906G*: CG2
Device is Halogen Free by design
*
R6 (23-January 2009)
相关型号：
CMPT3906GBK
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3
CENTRAL
CMPT3906GTR
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3
CENTRAL
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