概述
规格参数
数据手册
替代型号CMPT6428 概述
NPN SILICON TRANSISTOR NPN硅晶体管 小信号双极晶体管
CMPT6428 规格参数
| 是否无铅： | 含铅 | 是否Rohs认证： | 不符合 |
| 生命周期： | Active | 零件包装代码： | SOT-23 |
| 包装说明： | SOT-23, 3 PIN | 针数： | 3 |
| Reach Compliance Code： | not_compliant | ECCN代码： | EAR99 |
| HTS代码： | 8541.21.00.95 | 风险等级： | 5.17 |
| 其他特性： | LOW NOISE | 最大集电极电流 (IC)： | 0.2 A |
| 集电极-发射极最大电压： | 50 V | 配置： | SINGLE |
| 最小直流电流增益 (hFE)： | 250 | JESD-30 代码： | R-PDSO-G3 |
| JESD-609代码： | e0 | 元件数量： | 1 |
| 端子数量： | 3 | 最高工作温度： | 150 °C |
| 封装主体材料： | PLASTIC/EPOXY | 封装形状： | RECTANGULAR |
| 封装形式： | SMALL OUTLINE | 峰值回流温度（摄氏度）： | NOT SPECIFIED |
| 极性/信道类型： | NPN | 最大功率耗散 (Abs)： | 0.35 W |
| 认证状态： | Not Qualified | 子类别： | Other Transistors |
| 表面贴装： | YES | 端子面层： | Tin/Lead (Sn/Pb) |
| 端子形式： | GULL WING | 端子位置： | DUAL |
| 处于峰值回流温度下的最长时间： | NOT SPECIFIED | 晶体管应用： | AMPLIFIER |
| 晶体管元件材料： | SILICON | 标称过渡频率 (fT)： | 100 MHz |
| Base Number Matches： | 1 |
CMPT6428 数据手册
通过下载CMPT6428数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
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Ce n t r a l
CMPT6428
CMPT6429
S e m ic o n d u c t o r Co r p .
NPN SILICON TRANSISTOR
DESCRIPTION:
The
CENTRAL
SEMICONDUCTOR
CMPT6428,CMPT6429typesareNPNSilicon
Transistors manufactured by the epitaxial
planar process, epoxy molded in a surface
mount package, designed for high gain
amplifier applications.
Marking Codes are C1K and C1L
Respectively.
SOT-23 CASE
o
MAXIMUM RATINGS (T =25 C)
A
SYMBOL
CMPT6428
CMPT6429
UNITS
V
V
V
mA
mW
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
V
V
60
50
55
45
CBO
CEO
EBO
6.0
200
350
I
P
C
Power Dissipation
D
Operating and Storage
Junction Temperature
Thermal Resistance
o
T ,T
-65 to +150
357
C
J stg
o
Θ
C/W
JA
o
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)
A
CMPT6428
CMPT6429
SYMBOL
TEST CONDITIONS
MIN
MAX
10
100
10
60
50
0.20
0.60
0.66
MIN
MAX
10
100
10
55
45
0.20
0.60
0.66
UNITS
nA
nA
nA
V
I
I
I
V
V
V
=30V
=30V
=5.0V
CBO
CEO
EBO
CBO
CEO
CE(SAT)
CE(SAT)
BE(ON)
FE
FE
FE
CB
CE
BE
BV
BV
V
V
V
h
h
h
I =100µA
C
I =1.0mA
V
V
V
V
C
I =10mA, I =0.5mA
C
B
B
C
I =100mA, I =5.0mA
C
V
=5.0V, I =1.0mA
0.56
250
250
250
250
0.56
500
500
500
500
100
CE
CE
CE
CE
CE
CE
V
V
V
V
V
=5.0V, I =10µA
C
=5.0V, I =100µA
650
700
1250
700
C
=5.0V, I =1.0mA
C
h
f
=5.0V, I =10mA
C
FE
=5.0V, I =1.0mA, f=100MHz 100
MHz
T
C
190
CMPT6428
MIN MAX
CMPT6429
SYMBOL
TEST CONDITIONS
MIN
MAX
3.0
UNITS
pF
C
C
V
V
=10V, I =0, f=1.0MHz
=0.5V, I =0, f=1.0MHz
C
3.0
8.0
ob
CB
BE
E
8.0
pF
ib
All dimensions in inches (mm).
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
R2
191
CMPT6428 替代型号
| 型号 | 制造商 | 描述 | 替代类型 | 文档 |
| PMBT6428 | NXP | NPN general purpose transistors | 功能相似 |
|
| CMPT6428TR | CENTRAL | Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, | 功能相似 |
|
| CMPT6428LEADFREE | CENTRAL | Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, | 功能相似 |
|
CMPT6428 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| CMPT6428BKPBFREE | CENTRAL | Transistor, | 获取价格 |
|
| CMPT6428LEADFREE | CENTRAL | Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN | 获取价格 |
|
| CMPT6428TR | CENTRAL | Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, | 获取价格 |
|
| CMPT6428TR13 | CENTRAL | Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, | 获取价格 |
|
| CMPT6428TR13LEADFREE | CENTRAL | Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, | 获取价格 |
|
| CMPT6428TRLEADFREE | CENTRAL | Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, | 获取价格 |
|
| CMPT6428TRPBFREE | CENTRAL | Transistor, | 获取价格 |
|
| CMPT6428_10 | CENTRAL | SURFACE MOUNT NPN SILICON TRANSISTOR | 获取价格 |
|
| CMPT6429 | CENTRAL | NPN SILICON TRANSISTOR | 获取价格 |
|
| CMPT6429BK | CENTRAL | Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, | 获取价格 |
|
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