CMPT8099LEADFREE [CENTRAL]
暂无描述;
| 型号： | CMPT8099LEADFREE |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | 暂无描述 晶体 小信号双极晶体管 光电二极管 放大器 |
| 文件： | 总2页 (文件大小：90K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
CMPT8099 NPN
CMPT8599 PNP
Central
Semiconductor Corp.
COMPLEMENTARY
DESCRIPTION:
SILICON TRANSISTOR
The
CENTRAL
SEMICONDUCTOR
CMPT8099, CMPT8599 types are
Complementary Silicon Transistors
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for general purpose audio amplifier
applications.
Marking Codes are CKB and C2W
Respectively.
SOT-23 CASE
o
MAXIMUM RATINGS (T =25 C)
A
SYMBOL
CMPT8099
CMPT8599
UNITS
V
V
V
mA
mW
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
80
80
6.0
80
80
5.0
CBO
CEO
EBO
V
V
I
500
350
C
Power Dissipation
P
D
Operating and Storage
Junction Temperature
Thermal Resistance
o
T ,T
J stg
JA
-65 to +150
357
C
C/W
o
Q
o
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)
A
CMPT8099
CMPT8599
MIN MAX UNITS
SYMBOL
TEST CONDITIONS
MIN MAX
I
I
I
V
V
V
=80V
=6.0V
=4.0V
0.1
0.1
-
0.1
-
0.1
mA
mA
mA
V
V
V
V
V
V
CBO
EBO
EBO
CBO
CEO
EBO
CE(SAT)
CE(SAT)
BE(ON)
FE
FE
CB
BE
BE
BV
BV
BV
V
V
V
h
h
I =100mA
80
80
6.0
80
80
5.0
C
I =10mA
C
I =10mA
E
I =100mA, I =5.0mA
0.4
0.3
0.8
0.4
0.3
0.6 0.8
100 300
100
C
B
B
C
C
I =100mA, I =10mA
C
VCE=5.0V, I =10mA
0.6
V
V
=5.0V, I =1.0mA
100 300
100
CE
CE
=5.0V, I =10mA
C
194
CMPT8099
MIN MAX
75
150
6.0
25
CMPT8599
MIN MAX UNITS
75
SYMBOL
TEST CONDITIONS
h
V
V
V
V
=5.0V, I =100mA
FE
CE
CE
CB
BE
C
f
C
=5.0V, I =10mA, f=100MHz
C
150
MHz
pF
T
=10V, I =0, f=1.0MHz
4.5
30
ob
ib
E
C
=0.5V, I =0, f=1.0MHz
C
pF
All dimensions in inches (mm).
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
R2
195
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