CMPTH81TR [CENTRAL]
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Silicon, PNP, PLASTIC PACKAGE-3;
| 型号： | CMPTH81TR |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Silicon, PNP, PLASTIC PACKAGE-3 晶体 晶体管 |
| 文件： | 总2页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
Central
CMPTH81
Semiconductor Corp.
SURFACE MOUNT
PNP SILICON RF TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPTH81
type is a PNP Silicon RF Transistor, epoxy
molded in a surface mount package, designed
for general RF amplifier applications.
MARKING CODE: C3D
SOT-23 CASE
MAXIMUM RATINGS: (T =25°C)
A
SYMBOL
UNITS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Continuous)
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
V
V
V
20
20
3.0
50
V
V
V
mA
mW
CBO
CEO
EBO
I
C
D
P
225
*
T ,T
J stg
-55 to +150
556
°C
°C/W
Θ
JA
ELECTRICAL CHARACTERISTICS: (T =25°C UNLESS OTHERWISE NOTED)
A
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
I
I
V
V
=10V
=2.0V
100
100
nA
nA
V
V
V
CBO
EBO
CBO
CEO
CB
EB
BV
BV
BV
V
V
h
f
C
C
I =10µA
20
20
3.0
C
I =1.0mA
C
I =10µA
EBO
E
I =5.0mA, I =500µA
0.5
0.9
V
V
CE(SAT)
BE(ON)
FE
T
cb
ce
C
B
C
C
C
E
B
V
=10V, I =5.0mA
=10V, I =5.0mA
=10V, I =5.0mA, f=100MHz
=10V, I =0, f=1.0MHz
CE
CE
CE
CB
CB
V
V
V
V
60
600
MHz
pF
pF
0.85
0.65
=10V, I =0, f=1.0MHz
* FR-4 Epoxy PCB Substrate 1.6” x 1.6” x 0.06”\
R3 (20-February 2003)
TM
CMPTH81
Central
Semiconductor Corp.
SURFACE MOUNT
PNP SILICON RF TRANSISTOR
SOT-23 CASE- MECHANICAL OUTLINE
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
MARKING CODE: C3D
R3 (20-February 2003)
相关型号：
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