CMUDM7004TRPBFREE [CENTRAL]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,;
| 型号： | CMUDM7004TRPBFREE |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
| 文件： | 总2页 (文件大小：392K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CMUDM7004
SURFACE MOUNT
N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
www.centralsemi.com
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMUDM7004
is an Enhancement-mode N-Channel MOSFET,
manufactured by the N-Channel DMOS Process,
designed for high speed pulsed amplifier and driver
applications. This MOSFET offers Low r
Low Theshold Voltage.
and
DS(on)
MARKING CODE: 74C
FEATURES:
• ESD Protection up to 2kV
SOT-523 CASE
• Low r
DS(on)
APPLICATIONS:
• Load/Power Switches
• Power Supply Converter Circuits
• Battery Powered Portable Devices
• Low Threshold Voltage
• Logic Level Compatible
• Small, SOT-523 Surface Mount Package
• Complimentary P-Channel MOSFET: CMUDM8004
MAXIMUM RATING: (T =25°C)
Drain-Source Voltage
SYMBOL
UNITS
V
A
V
30
8.0
DS
GS
Gate-Source Voltage
V
V
Continuous Drain Current
Power Dissipation
I
450
mA
mW
°C
D
P
250
D
Operating and Storage Junction Temperature
T , T
-65 to +150
J
stg
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
I
, I
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
=8.0V, V =0
3.0
μA
GSSF GSSR
GS
DS
GS
DS
I
=30V, V =0
GS
1.0
μA
V
DSS
BV
=0, I =10μA
30
0.5
0.5
DSS
GS(th)
SD
D
V
V
=V , I =250μA
1.0
1.1
V
DS GS
D
=0, I =400mA
V
GS
GS
GS
GS
DS
DS
DS
DS
DS
DS
DS
DS
DS
S
r
r
r
=4.5V, I =200mA
280
390
460
560
730
mΩ
mΩ
mΩ
nC
nC
nC
mS
pF
pF
pF
ns
DS(ON)
DS(ON)
DS(ON)
D
=2.5V, I =100mA
D
=1.8V, I =75mA
550
D
Q
Q
Q
=15V, V =4.5V, I =1.0A
GS
0.792
0.15
0.23
g(tot)
gs
D
=15V, V =4.5V, I =1.0A
GS
D
=15V, V =4.5V, I =1.0A
gd
GS
D
g
=10V, I =100mA
200
FS
D
C
C
C
=25V, V =0, f=1.0MHz
5.0
43
8.0
20
75
10
45
15
rss
iss
GS
=25V, V =0, f=1.0MHz
GS
=25V, V =0, f=1.0MHz
oss
GS
t
t
=5.0V, V =4.0V, I =75mA, R =10Ω
GS
on
off
D
G
=5.0V, V =4.0V, I =75mA, R =10Ω
ns
GS
D
G
R2 (2-August 2011)
CMUDM7004
SURFACE MOUNT
N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
SOT-523 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
(Bottom View)
LEAD CODE:
1) Gate
2) Source
3) Drain
MARKING CODE: 74C
R2 (2-August 2011)
www.centralsemi.com
相关型号：
CMUDM7005TR
Small Signal Field-Effect Transistor, 0.915A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ULTRAMINI-3
CENTRAL
CMUDM8001BK
Small Signal Field-Effect Transistor, 0.1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ULTRAMINI-3
CENTRAL
©2020 ICPDF网 联系我们和版权申明