CMXDM7002ABK [CENTRAL]
Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERMINI PACKAGE-6;![CMXDM7002ABK](http://pdffile.icpdf.com/pdf1/p00030/img/icpdf/CMXDM7002A_158024_icpdf.jpg)
型号: | CMXDM7002ABK |
厂家: | ![]() |
描述: | Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERMINI PACKAGE-6 |
文件: | 总2页 (文件大小:90K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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TM
CMXDM7002A
Central
Semiconductor Corp.
DUAL
N-CHANNEL
ENHANCEMENT-MODE
SURFACE MOUNT MOSFET
DESCRIPTION:
The
CENTRAL
SEMICONDUCTOR
CMXDM7002A is special dual version of the
2N7002 Enhancement-mode N-Channel Field
Effect Transistor, manufactured by the N-Channel
DMOS Process, designed for high speed pulsed
amplifier and driver applications. This special
Dual Transistor device offers low r
DS (ON).
Marking Code is X02A
and
DS(ON)
low V
SOT-26 CASE
MAXIMUM RATINGS (T =25°C)
A
SYMBOL
UNITS
Drain-Source Voltage
V
60
60
V
V
DS
DG
GS
Drain-Gate Voltage
V
V
Gate-Source Voltage
40
V
Continuous Drain Current
Continuous Source Current (Body Diode)
Maximum Pulsed Drain Current
Maximum Pulsed Source Current
Power Dissipation
I
280
280
1.5
1.5
350
mA
mA
A
D
I
S
I
DM
I
A
SM
P
mW
D
Operating and Storage
Junction Temperature
T ,T
J stg
-65 to +150
357
°C
Thermal Resistance
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS PER TRANSISTOR (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
MAX
100
100
1.0
UNITS
nA
nA
µA
µA
mA
V
I
I
I
I
I
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
=20V, V =0V
DS
GSSF
GSSR
DSS
GS
GS
DS
DS
GS
GS
=20V, V =0V
DS
=60V, V =0V
GS
=60V, V =0V, T =125°C
500
DSS
GS
DS
j
=10V, V
≥ 2V
500
60
D(ON)
DS(ON)
BV
GS(th)
=0V, I =10µA
DSS
D
V
V
V
=V , I =250µA
1.0
2.5
1.0
0.15
2.0
3.5
3.0
5.0
V
DS GS D
=10V, I =500mA
V
DS(ON)
DS(ON)
DS(ON)
DS(ON)
DS(ON)
DS(ON)
GS
GS
GS
GS
GS
GS
DS
DS
DS
DS
DD
D
=5.0V, I =50mA
V
D
r
r
r
r
=10V, I =500mA
Ω
D
=10V, I =500mA, T =125°C
Ω
Ω
Ω
D
j
=5.0V, I =50mA
D
=5.0V, I =50mA, T =125°C
D
j
g
≥ 2V
, I =200mA
DS(ON) D
80
mmhos
pF
pF
pF
ns
FS
C
C
C
=25V, V =0, f=1.0MHz
5.0
50
25
20
20
1.2
rss
iss
GS
=25V, V =0, f=1.0MHz
GS
=25V, V =0, f=1.0MHz
oss
GS
t
t
=30V, V =10V, I =200mA,
GS
on
D
R =25Ω, R =150Ω
ns
off
G
L
V
V
=0V, I =400mA
V
SD
GS
S
R0 ( 05-December 2001)
TM
CMXDM7002A
Central
DUAL
Semiconductor Corp.
N-CHANNEL
ENHANCEMENT-MODE
SURFACE MOUNT MOSFET
SOT-26 CASE - MECHANICAL OUTLINE
Marking Code: X02A
LEAD CODE:
1) Gate Q1
2) Source Q1
3) Drain Q2
4) Gate Q2
5) Source Q2
6) Drain Q1
R0 ( 05-December 2001)
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CENTRAL
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