CMXT2207TRPBFREE [CENTRAL]
Small Signal Bipolar Transistor, 0.6A I(C), NPN and PNP,;
| 型号： | CMXT2207TRPBFREE |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Small Signal Bipolar Transistor, 0.6A I(C), NPN and PNP, |
| 文件： | 总2页 (文件大小：551K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CMXT2207
www.centralsemi.com
SURFACE MOUNT
DUAL COMPLEMENTARY
SILICON TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMXT2207 type is
a dual complementary silicon transistor manufactured
by the epitaxial planar process, epoxy molded in a
SUPERmini™ surface mount package, and designed
for small signal general purpose and switching
applications.
MARKING CODE: X07
SOT-26 CASE
MAXIMUM RATINGS: (T =25°C)
NPN
PNP
A
SYMBOL
UNITS
V
Collector-Base Voltage
V
V
V
75
40
60
60
CBO
CEO
EBO
Collector-Emitter Voltage
Emitter-Base Voltage
V
6.0
5.0
V
Continuous Collector Current
Power Dissipation
I
600
350
mA
mW
°C
C
P
D
Operating and Storage Junction Temperature
Thermal Resistance
T , T
-65 to +150
357
J
stg
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)
A
NPN
MAX
SYMBOL
TEST CONDITIONS
MIN
-
UNITS
I
I
I
I
I
I
I
V
V
V
V
V
V
V
=60V
=50V
=60V, T =125°C
=50V, T =125°C
=3.0V
=60V, V =3.0V
=30V, V =0.5V
10
-
-
nA
nA
μA
μA
nA
nA
nA
V
V
V
V
V
CBO
CBO
CBO
CBO
EBO
CEV
CEV
CBO
CEO
EBO
CE(SAT)
CE(SAT)
BE(SAT)
BE(SAT)
FE
CB
CB
CB
CB
EB
CE
CE
-
-
-
-
-
-
-
10
-
10
10
-
-
-
-
-
-
-
-
10
-
10
-
-
50
-
-
A
A
EB
BE
-
BV
BV
BV
V
V
V
V
h
h
h
h
h
h
I =10μA
75
40
6.0
-
60
60
5.0
-
-
-
C
I =10mA
C
I =10μA
-
-
E
I =150mA, I =15mA
0.3
1.0
1.2
2.0
-
-
-
0.4
1.6
1.3
2.6
-
-
-
C
B
B
B
B
I =500mA, I =50mA
-
C
I =150mA, I =15mA
0.6
-
V
V
C
I =500mA, I =50mA
-
C
V
=10V, I =0.1mA
35
50
75
100
50
40
300
-
75
100
100
100
-
50
-
CE
CE
CE
CE
CE
CE
CE
CE
C
V
V
V
V
V
V
V
=10V, I =1.0mA
FE
FE
FE
FE
C
=10V, I =10mA
C
=10V, I =150mA
300
300
C
=1.0V, I =150mA
-
-
-
-
-
-
-
-
C
=10V, I =500mA
FE
C
f
f
=20V, I =20mA, f=100MHz
MHz
MHz
T
T
C
=20V, I =50mA, f=100MHz
200
C
R3 (12-February 2010)
CMXT2207
SURFACE MOUNT
DUAL COMPLEMENTARY
SILICON TRANSISTORS
ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued: (T =25°C unless otherwise noted)
A
NPN
MAX
PNP
MIN MAX
SYMBOL
TEST CONDITIONS
=10V, I =0, f=1.0MHz
MIN
-
-
-
2.0
0.25
-
-
50
75
5.0
25
-
-
-
-
-
-
-
UNITS
pF
pF
pF
kΩ
C
C
C
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
8.0
25
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
8.0
ob
ib
ib
CB
EB
EB
CE
CE
CE
CE
CE
CE
CE
CE
CB
CE
CC
CC
CC
CC
CC
CC
CC
CC
E
=0.5V, I =0, f=1.0MHz
-
30
-
-
-
-
-
-
-
C
=2.0V, I =0, f=1.0MHz
C
h
h
h
h
h
h
h
h
=10V, I =1.0mA, f=1.0kHz
8.0
1.25
8.0
4.0
300
375
35
200
150
4.0
-
10
25
-
225
-
ie
ie
C
=10V, I =10mA, f=1.0kHz
kΩ
C
-4
-4
=10V, I =1.0mA, f=1.0kHz
x10
x10
re
re
fe
fe
oe
oe
C
=10V, I =10mA, f=1.0kHz
C
=10V, I =1.0mA, f=1.0kHz
C
=10V, I =10mA, f=1.0kHz
C
=10V, I =1.0mA, f=1.0kHz
μS
μS
ps
dB
ns
ns
ns
ns
ns
ns
ns
ns
C
=10V, I =10mA, f=1.0kHz
-
-
-
C
rb’C
NF
=10V, I =20mA, f=31.8MHz
c
E
=10V, I =100mA, R =1.0kΩ, f=1.0kHz
C
S
t
t
t
t
t
t
t
t
=30V, V =0.5V, I =150mA, I =15mA
45
10
40
100
-
80
-
on
d
r
off
s
s
f
BE B1
C
C
C
=30V, V =0.5V, I =150mA, I =15mA
BE B1
=30V, V =0.5V, I =150mA, I =15mA
BE B1
=6.0V, I =150mA, I =I =15mA
C
B1 B2
B1 B2
B1 B2
B1 B2
=30V, I =150mA, I =I =15mA
C
=6.0V, I =150mA, I =I =15mA
-
-
-
C
=30V, I =150mA, I =I =15mA
60
-
C
=6.0V, I =150mA, I =I =15mA
B1 B2
30
f
C
SOT-26 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter Q1
2) Base Q1
3) Collector Q2
4) Emitter Q2
5) Base Q2
6) Collector Q1
MARKING CODE: X07
R3 (12-February 2010)
www.centralsemi.com
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