CMXT3946_10 [CENTRAL]

SURFACE MOUNT DUAL COMPLEMENTARY SILICON TRANSISTORS; 表面安装双路互补硅晶体管
CMXT3946_10
型号: CMXT3946_10
厂家: CENTRAL SEMICONDUCTOR CORP    CENTRAL SEMICONDUCTOR CORP
描述:

SURFACE MOUNT DUAL COMPLEMENTARY SILICON TRANSISTORS
表面安装双路互补硅晶体管

晶体 晶体管
文件: 总2页 (文件大小:551K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
CMXT3946  
www.centralsemi.com  
SURFACE MOUNT  
DUAL COMPLEMENTARY  
SILICON TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMXT3946 type is  
a dual complementary silicon transistor manufactured  
by the epitaxial planar process, epoxy molded in a  
SUPERmini™ surface mount package, and designed  
for small signal general purpose and switching  
applications.  
MARKING CODE: X46  
SOT-26 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
NPN  
60  
PNP  
40  
UNITS  
V
A
Collector-Base Voltage  
V
V
V
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
40  
40  
V
6.0  
5.0  
V
Continuous Collector Current  
Power Dissipation  
I
200  
350  
mA  
mW  
°C  
C
P
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
357  
J
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)  
A
NPN  
MAX  
PNP  
SYMBOL  
TEST CONDITIONS  
=30V, V =3.0V  
MIN  
-
MIN MAX  
UNITS  
I
V
50  
-
-
40  
40  
5.0  
-
50  
nA  
V
CEV  
CE  
I =10μA  
EB  
BV  
BV  
BV  
60  
40  
6.0  
-
-
-
CBO  
CEO  
C
I =1.0mA  
-
V
C
I =10μA  
-
-
V
EBO  
E
V
V
V
V
I =10mA, I =1.0mA  
0.20  
0.30  
0.85  
0.95  
-
0.25  
0.40  
V
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(SAT)  
FE  
C
B
I =50mA, I =5.0mA  
-
-
V
C
B
I =10mA, I =1.0mA  
0.65  
-
0.65 0.85  
V
C
B
I =50mA, I =5.0mA  
-
0.95  
-
V
C
B
h
h
h
h
h
V
=1.0V, I =0.1mA  
40  
70  
100  
60  
30  
300  
-
60  
80  
100  
60  
30  
250  
-
CE  
CE  
CE  
CE  
CE  
CE  
CB  
BE  
CE  
CE  
C
V
V
V
V
V
V
V
V
V
=1.0V, I =1.0mA  
-
-
FE  
C
=1.0V, I =10mA  
300  
-
300  
-
FE  
C
=1.0V, I =50mA  
FE  
C
=1.0V, I =100mA  
-
-
FE  
C
f
=20V, I =10mA, f=100MHz  
-
-
MHz  
pF  
T
C
C
C
=5.0V, I =0, f=1.0MHz  
4.0  
8.0  
10  
8.0  
4.5  
10  
12  
10  
ob  
ib  
E
=0.5V, I =0, f=1.0MHz  
-
-
pF  
C
h
h
=10V, I =1.0mA, f=1.0kHz  
1.0  
0.5  
2.0  
0.1  
kΩ  
x10-4  
ie  
C
=10V, I =1.0mA, f=1.0kHz  
C
re  
R3 (12-February 2010)  
CMXT3946  
SURFACE MOUNT  
DUAL COMPLEMENTARY  
SILICON TRANSISTORS  
ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued: (T =25°C unless otherwise noted)  
A
NPN  
MAX  
PNP  
SYMBOL  
TEST CONDITIONS  
MIN  
100  
1.0  
MIN MAX  
UNITS  
h
h
V
V
V
=10V, I =1.0mA, f=1.0kHz  
400  
40  
100  
3.0  
400  
60  
fe  
CE  
CE  
CE  
C
=10V, I =1.0mA, f=1.0kHz  
μS  
oe  
C
NF  
=5.0V, I =100μA, R =1.0kΩ,  
C S  
f=10Hz to 15.7kHz  
-
-
-
-
-
5.0  
35  
-
-
-
-
-
4.0  
35  
dB  
ns  
ns  
ns  
ns  
t
t
t
t
V
V
V
V
=3.0V, V =0.5V, I =10mA, I =1.0mA  
BE B1  
d
r
CC  
CC  
CC  
CC  
C
=3.0V, V =0.5V, I =10mA, I =1.0mA  
35  
35  
BE B1  
C
=3.0V, I =10mA, I =I =1.0mA  
200  
50  
225  
75  
s
f
C
B1 B2  
=3.0V, I =10mA, I =I =1.0mA  
C
B1 B2  
SOT-26 CASE - MECHANICAL OUTLINE  
LEAD CODE:  
1) Emitter Q1  
2) Base Q1  
3) Collector Q2  
4) Emitter Q2  
5) Base Q2  
6) Collector Q1  
MARKING CODE: X46  
R3 (12-February 2010)  
www.centralsemi.com  

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