CP117-2N6301-WN [CENTRAL]
Transistor;型号: | CP117-2N6301-WN |
厂家: | CENTRAL SEMICONDUCTOR CORP |
描述: | Transistor |
文件: | 总2页 (文件大小:220K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TM
PROCESS CP117
Power Transistor
Central
Semiconductor Corp.
NPN - Darlington Chip
PROCESS DETAILS
Process
EPITAXIAL BASE
111 X 111 MILS
10 MILS
Die Size
Die Thickness
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
20 X 30 MILS
20 X 26 MILS
Al - 30,000Å
Au/Cr/Ni/Au - Ni-6,000Å, Au-6,000Å
GEOMETRY
GROSS DIE PER 5 INCH WAFER
910
PRINCIPAL DEVICE TYPES
2N6043
2N6044
2N6045
2N6301
BACKSIDE COLLECTOR
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R6 (1 -August 2002)
TM
PROCESS CP117
Typical Electrical Characteristics
Central
Semiconductor Corp.
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
R6 (1 -August 2002)
www.centralsemi.com
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