CP219_10 [CENTRAL]
Power Transistor NPN - High Current Transistor Chip; 功率晶体管NPN - 高电流晶体管芯片
| 型号： | CP219_10 |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Power Transistor NPN - High Current Transistor Chip |
| 文件： | 总2页 (文件大小：744K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PROCESS CP219
Power Transistor
NPN - High Current Transistor Chip
PROCESS DETAILS
Process
EPITAXIAL PLANAR
Die Size
83 x 83 MILS
11 MILS
Die Thickness
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
13.2 x 19.7 MILS
13.2 x 21.2 MILS
Al - 30,000Å
Au - 12,000Å
GEOMETRY
GROSS DIE PER 4 INCH WAFER
1,670
PRINCIPAL DEVICE TYPES
2N5336
2N5337
2N5338
2N5339
2N5427
2N5428
2N5429
2N5430
D44H11
CJD44H11
BACKSIDE COLLECTOR
R3 (22-March 2010)
www.centralsemi.com
PROCESS CP219
Typical Electrical Characteristics
R3 (22-March 2010)
www.centralsemi.com
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